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Número de pieza | BLF7G20LS-160P | |
Descripción | Power LDMOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! BLF7G20L-160P;
BLF7G20LS-160P
Power LDMOS transistor
Rev. 01 — 22 June 2010
www.DataSheet4U.com
Objective data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV) Gp
ηD ACPR400k
(MHz)
(mA) (V) (W) (dB) (%) (dBc)
CW 1805 to 1880 850 28 135 17.5 57 -
GSM EDGE
1805 to 1880 850 28 65
18.5 43 −61
ACPR600k
(dBc)
-
−74
EVMrms
(%)
-
2.5
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low-memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to
2000 MHz frequency range
1 page NXP Semiconductors
www.DataSheet4U.com
BLF7G20L-160P; BLF7G20LS-160P
Power LDMOS transistor
Earless flanged LDMOST ceramic package; 4 leads
D
A
D1
U1
H1
1
F
5
D
w2 D
2
SOT1121B
c
H U2
E1 E
34
b w3
Q
e
Dimensions
0 5 10 mm
scale
Unit(1) A b c D D1 e E E1 F H H1 Q U1 U2 w2 w3
max 4.75 3.94 0.18 20.02 19.96
9.53 9.53 1.14 19.94 12.83 1.70 20.70 9.91
mm nom
8.89
0.51 0.25
min 3.45 3.68 0.08 19.61 19.66
9.27 9.27 0.89 18.92 12.57 1.45 20.45 9.65
max 0.187 0.155 0.007 0.788 0.786
0.375 0.375 0.045 0.785 0.505 0.067 0.815 0.39
inches nom
0.35
0.02 0.01
min 0.136 0.145 0.003 0.772 0.774
0.365 0.365 0.035 0.745 0.495 0.057 0.805 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
Outline
version
References
IEC
JEDEC
JEITA
European
projection
SOT1121B
Fig 2. Package outline SOT1121B
sot1121b_po
Issue date
09-10-12
09-12-14
BLF7G20L-160P_7G20LS-160P
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 22 June 2010
© NXP B.V. 2010. All rights reserved.
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BLF7G20LS-160P | Power LDMOS transistor | NXP Semiconductors |
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