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PDF BUK9MFF-65PSS Data sheet ( Hoja de datos )
| Número de pieza | BUK9MFF-65PSS | |
| Descripción | Dual TrenchPLUS FET Logic Level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK9MFF-65PSS
Dual TrenchPLUS FET Logic Level FET
Rev. 04 — 17 June 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode field-effect power transistor in SO20. Device is
manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring
very low on-state resistance, integrated current sensing transistors and over temperature
protection diodes.
1.2 Features and benefits
Integrated current sensors
Integrated temperature sensors
1.3 Applications
Lamp switching
Motor drive systems
Power distribution
Solenoid drivers
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
FET1 and FET2 static characteristics
RDSon
drain-source
VGS = 5 V; ID = 10 A; Tj = 25 °C;
on-state resistance see Figure 13; see Figure 16
ID/Isense
ratio of drain current Tj = 25 °C; VGS = 5 V;
to sense current
see Figure 17
V(BR)DSS
drain-source
ID = 250 µA; VGS = 0 V;
breakdown voltage Tj = 25 °C
Min Typ Max Unit
- 11.4 13.4 mΩ
5831 6479 7127 A/A
65 - - V
1 page  
NXP Semiconductors
www.DataSheet4U.com
BUK9MFF-65PSS
Dual TrenchPLUS FET Logic Level FET
103
ID
(A)
102
10
1
10−1
10−2
10−1
Limit RDSon = VDS / ID
001aal759
tp = 10 μs
100 μs
1 ms
DC 10 ms
100 ms
1 10 102
VDS (V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9MFF-65PSS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
5 of 18
5 Page 
NXP Semiconductors
30
ID
(A)
25
20
15
10
5
0
0
Tj = 150 C 25 C
123
003aad601
45
VGS (V)
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BUK9MFF-65PSS
Dual TrenchPLUS FET Logic Level FET
100
RDS on
(mΩ)
80
003aad605
2.5 3.0 3.5 4.0 4.5
60
40 5.0
20
0
0
VGS (V) =10 V
25 50 75 100 125 150 175
ID (A)
Fig 12. Transfer characteristics; drain current as a
function of gate-source voltage; typical values,
FET1 and FET2
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values, FET1 and FET2
10−1
ID
(A)
10−2
10−3
001aam030
min typ max
2.5
VGS(th)
(V)
2.0
1.5
001aam029
max
typ
10−4
1.0 min
10−5
0.5
10−6
0123
VGS (V)
0
−60 0
60 120 180
Tj (°C)
Fig 14. Sub-threshold drain current as a function of
gate-source voltage, FET1 and FET2
Fig 15. Gate-source threshold voltage as a function of
junction temperature, FET1 and FET2
BUK9MFF-65PSS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 17 June 2010
© NXP B.V. 2010. All rights reserved.
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