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BUK7635-55A PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7635-55A
기능 TrenchMOS standard level FET
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BUK7635-55A 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BUK7535-55A; BUK7635-55A
TrenchMOS™ standard level FET
Rev. 01 — 10 November 2000
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7535-55A in SOT78 (TO-220AB)
BUK7635-55A in SOT404 (D 2-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Standard level compatible.
3. Applications
s Automotive and general purpose power switching:
c
c x 12 V and 24 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb mounting base;
connected to drain (d)
mb
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
Symbol
d
g
MBB076
s




BUK7635-55A pdf, 반도체, 판매, 대치품
Philips Semiconductors
BUK7535-55A; BUK7635-55Awww.DataSheet4U.com
TrenchMOS™ standard level FET
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
mounted on printed circuit board;
minimum footprint; SOT404
package
Rth(j-mb)
thermal resistance from junction to mounting Figure 4
base
7.1 Transient thermal impedance
Value
60
50
Unit
K/W
K/W
1.7 K/W
10
Zth(j-mb)
(K/W)
1 δ = 0.5
0.2
0.1
10-1 0.05
0.02
10-2
10-6
Single Shot
10-5
10-4
10-3
03nb85
10-2
P
δ
=
tp
T
tp
T
t
10-1 tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07646
Product specification
Rev. 01 — 10 November 2000
© Philips Electronics N.V. 2000. All rights reserved.
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BUK7635-55A 전자부품, 판매, 대치품
Philips Semiconductors
BUK7535-55A; BUK7635-55Awww.DataSheet4U.com
TrenchMOS™ standard level FET
03aa32
5
4.5
VGS(th)
(V) 4
3.5
max.
3
typ.
2.5
2 min
1.5
1
0.5
0
-60 -20 20 60 100 140 180
Tj (oC)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-1
ID
(A) 10-2
03aa35
10-3
10-4
min typ
max
10-5
10-6
012345
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
gfs 16
(S)
14
03nb78
12
10
8
6
4
2
0
0 10 20 30 40 50
ID (A)
Tj = 25 °C; VDS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
2500
C (pF)
2000
03nb83
1500
1000
Ciss
500
Coss
0 Crss
0.01 0.1 1 10 100
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07646
Product specification
Rev. 01 — 10 November 2000
© Philips Electronics N.V. 2000. All rights reserved.
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BUK7635-55

TrenchMOS transistor Standard level FET

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BUK7635-55

TrenchMOS transistor Standard level FET

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