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PDF BUK7535-55A Data sheet ( Hoja de datos )
| Número de pieza | BUK7535-55A | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7535-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 27 January 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 3
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 20 A;
Tj = 175 °C; see Figure 11;
see Figure 12
VGS = 10 V; ID = 20 A;
Tj = 25 °C; see Figure 11;
see Figure 12
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 14 A; Vsup ≤ 55 V;
drain-source avalanche RGS = 50 Ω; VGS = 10 V;
energy
Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 55 V
- - 35 A
- - 85 W
- - 70 mΩ
- 30 35 mΩ
- - 49 mJ
1 page  
NXP Semiconductors
BUK7535-55A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to
mounting base
see Figure 4
thermal resistance from junction to ambient vertical in still air
Min Typ Max Unit
- - 1.7 K/W
- 60 - K/W
10
Zth(j-mb)
(K/W)
03nb85
1 δ = 0.5
0.2
0.1
10−1 0.05
0.02
P δ = tp
T
10−2
10−6
Single Shot
10−5
10−4
10−3
10−2
tp
T
t
10−1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7535-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 27 January 2011
© NXP B.V. 2011. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK7535-55A
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
Change notice Supersedes
BUK7535-55A v.2
Modifications:
20110127
Product data sheet
-
BUK7535_7635_55A v.1
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK7535-55A separated from data sheet BUK7535_7635_55A v.1.
BUK7535_7635_55A v.1 20001110
Product specification -
-
BUK7535-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 27 January 2011
© NXP B.V. 2011. All rights reserved.
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