Datasheet.kr   

BUK763R6-40C PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK763R6-40C
기능 N-channel TrenchMOS standard level FET
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고 



전체 14 페이지

		

No Preview Available !

BUK763R6-40C 데이터시트, 핀배열, 회로
BUK763R6-40C
N-channel TrenchMOS standard level FET
Rev. 04 — 16 June 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using advanced TrenchMOS technology. This product has been designed
and qualified to the appropriate AEC standard for use in high performance automotive
applications.
1.2 Features and benefits
AEC Q101 compliant
Avalanche robust
Suitable for standard level gate drive
Suitable for thermally demanding
environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads
High performance automotive power
systems
High performance Pulse Width
Modulation (PWM) applications




BUK763R6-40C pdf, 반도체, 판매, 대치품
NXP Semiconductors
www.DataSheet4U.com
BUK763R6-40C
N-channel TrenchMOS standard level FET
200
ID
(A)
150
003aad365
100
Capped at 100 A due to package
50
0
0 50 100 150 200
Tmb (°C)
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID (A)
102
Limit RDSon = VDS /ID
10
1
10-1
10-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac911
tp = 10 μs
100 μs
DC
1 ms
10 ms
100 ms
10
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
BUK763R6-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 16 June 2010
© NXP B.V. 2010. All rights reserved.
4 of 14

4페이지










BUK763R6-40C 전자부품, 판매, 대치품
NXP Semiconductors
www.DataSheet4U.com
BUK763R6-40C
N-channel TrenchMOS standard level FET
120 003aac583
gfs
(S)
90
60
30
0
0 15 30 45 ID (A) 60
150
ID
(A)
120
90
60
30
0
0
003aac584
Tj = 175°C
25 °C
2468
VGS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
101
ID
(A)
102
03aa35
min typ max
103
104
105
106
0246
VGS (V)
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
180
ID
(A)
150
20 10 5.8
120
90
60
30
003aac818
VGS (V) = 5.5
5.2
5
4.8
4.5
0
0 1.5 3 4.5 VDS (V) 6
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Output characteristics: drain current as a
function of drain-source voltage; typical values
BUK763R6-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 16 June 2010
© NXP B.V. 2010. All rights reserved.
7 of 14

7페이지



구       성총 14 페이지
다운로드[ BUK763R6-40C.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
BUK763R6-40C

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵