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PDF BUK9E06-55A Data sheet ( Hoja de datos )
| Número de pieza | BUK9E06-55A | |
| Descripción | TrenchMOS logic level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK9506-55A; BUK9606-55A;
BUK9E06-55A
TrenchMOS™ logic level FET
Rev. 03 — 23 July 2001
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK);
BUK9E06-55A in SOT226 (I2-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Logic level compatible.
3. Applications
s Automotive and general purpose power switching:
c
c x 12 V and 24 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb mb
mb
3 source (s)
mb mounting base,
connected to
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
123
MBK112
SOT226 (I2-PAK)
Symbol
g
MBB076
d
s
1 page  
Philips Semiconductors
BUK9506-55A; BUK9606-55A;www.DataSheet4U.com
BUK9E06-55A
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
55 − − V
Tj = −55 °C
50 − − V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±10 V; VDS = 0 V
VGS = 5 V; ID = 25 A;
Figure 7 and 8
1 1.5 2 V
0.5 − − V
− − 2.3 V
−
0.05 10
µA
− − 500 µA
− 2 100 nA
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
VGS = 4.5 V; ID = 25 A
VGS = 10 V; ID = 25 A
− 5.3 6.3 mΩ
− − 13.2 mΩ
− − 6.7 mΩ
− 4.8 5.8 mΩ
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS = 5 V; RG = 10 Ω
from drain lead 6 mm from
package to centre of die
−
−
−
−
−
−
−
−
6500
1000
650
45
180
420
235
4.5
8600
1200
850
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
nH
from contact screw on
mounting base to centre of
die SOT78
−
3.5 −
nH
from upper edge of drain
mounting base to centre of
die SOT404 / SOT226
−
2.5 −
nH
Ls
internal source inductance from source lead to source
−
bond pad
7.5 −
nH
9397 750 08416
Product data
Rev. 03 — 23 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
5 of 16
5 Page 
Philips Semiconductors
BUK9506-55A; BUK9606-55A;www.DataSheet4U.com
BUK9E06-55A
Plastic single-ended package; low-profile 3 lead TO-220AB
SOT226
D1 E
D
L2
b1
L
L1
123
ee
b
A
A1
mounting
base
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1 c
D D1 E
e
mm
4.5 1.40 0.9
4.1 1.27 0.7
1.3 0.7
1.0 0.4
9.65
8.65
1.5
1.1
10.3
9.7
2.54
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
IEC
SOT226
REFERENCES
JEDEC
low-profile
3-lead TO-220AB
EIAJ
L
15.0
13.5
L1
3.30
2.79
L2(1)
max
3.0
Q
2.6
2.2
EUROPEAN
PROJECTION
ISSUE DATE
99-05-27
99-09-13
Fig 18. SOT226 (I2-PAK).
9397 750 08416
Product data
Rev. 03 — 23 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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