BUK9245-55A Datasheet PDF - NXP Semiconductors
| Part Number | BUK9245-55A | |
| Description | TrenchMOS logic level FET | |
| Manufacturers | NXP Semiconductors | |
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BUK9245-55A
TrenchMOS™ logic level FET
Rev. 01 — 11 October 2001
M3D300
www.DataSheet4U.com
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology, featuring very low on-state resistance.
Product availability:
BUK9245-55A in SOT428 (D-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Logic level compatible.
3. Applications
s Automotive and general purpose power switching:
x 12 V and 24 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT428 (D-PAK), simplified outline and symbol
Description
Simplified outline
gate (g)
drain (d)
mb
source (s)
mounting base;
connected to
drain (d)
2
1
Top view
3
MBK091
SOT428 (D-PAK)
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
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Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±10 V; VDS = 0 V
VGS = 5 V; ID = 5 A;
Figure 7 and 8
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
VGS = 4.5 V; ID = 5 A
VGS = 10 V; ID = 5 A
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VGS = 5 V; VDD = 44 V;
ID = 5 A; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS = 5 V; RG = 10 Ω
measured from drain to
centre of die
Ls internal source inductance measured from source lead
to source bond pad
BUK9245-55Awww.DataSheet4U.com
TrenchMOS™ logic level FET
Min Typ Max Unit
55 − − V
50 − − V
1 1.5 2 V
0.5 − − V
− − 2.3 V
−
0.05 10
µA
− − 500 µA
− 2 100 nA
− 31 45 mΩ
− − 90 mΩ
− − 50 mΩ
− 27 40 mΩ
− 14 − nC
− 1.6 − nC
− 6.3 − nC
−
750
1006
pF
− 140 166 pF
− 97 132 pF
− 10 − ns
− 132 − ns
− 38 − ns
− 112 − ns
− 2.5 − nH
− 7.5 − nH
9397 750 08559
Product data
Rev. 01 — 11 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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| Link URL | [ Copy URL to Clipboard ] | |
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