|
|
|
부품번호 | BUK9509-40B 기능 |
|
|
기능 | Trenchmos Logic Level Fet | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
BUK95/9609-40B
TrenchMOS™ logic level FET
Rev. 01 — 15 April 2003
www.DataSheet4U.com
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
Product availability:
BUK9509-40B in SOT78 (TO-220AB)
BUK9609-40B in SOT404 (D2-PAK).
1.2 Features
s Very low on-state resistance
s 175 °C rated
s Q101 compliant
s Logic level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 241 mJ
s ID ≤ 75 A
s RDSon = 7.6 mΩ (typ)
s Ptot ≤ 157 W.
2. Pinning information
Table 1: Pinning - SOT78 and SOT404 simplified outlines and symbol
Pin Description
Simplified outline
1 gate (g)
mb
2 drain (d)
[1]
mb
3 source (s)
mb mounting base,
connected to
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Symbol
d
g
MBB076
s
Philips Semiconductors
BUK95/9609-40Bwww.DataSheet4U.com
TrenchMOS™ logic level FET
4. Thermal characteristics
Table 3: Thermal characteristics
Symbol Parameter
Rth(j-mb) thermal resistance from junction to mounting
base
Rth(j-a)
thermal resistance from junction to ambient
SOT78 (TO-220AB)
SOT404 (D2-PAK)
Conditions
Figure 4
Min Typ Max Unit
- - 0.95 K/W
vertical in still air
-
minimum footprint; mounted on a PCB -
60 -
50 -
K/W
K/W
4.1 Transient thermal impedance
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
0.1
10-1
0.05
0.02
10-2
single shot
10-3
10-6
10-5
10-4
10-3
10-2
03nm66
P
δ=
tp
T
tp
T
t
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 11242
Product data
Rev. 01 — 15 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4 of 15
4페이지 Philips Semiconductors
BUK95/9609-40Bwww.DataSheet4U.com
TrenchMOS™ logic level FET
300
ID
(A)
10
8
6
200
100
0
02
03nm62
Label is VGS (V)
5
4.8
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
46
8 10
VDS (V)
16
RDSon
(mΩ)
12
8
4
3
03nm61
7 11 15
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
20
3 3.4 3.6 3.8
RDSon
3.2
4
(mΩ)
15
03nm63
Label is VGS (V)
5
10 10
2
a
1.5
1
0.5
03aa27
5
0
Tj = 25 °C
100
200 300
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60 0 60 120 180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11242
Product data
Rev. 01 — 15 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
7 of 15
7페이지 | |||
구 성 | 총 15 페이지수 | ||
다운로드 | [ BUK9509-40B.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BUK9509-40B | Trenchmos Logic Level Fet | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |