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PDF KU056N03Q Data sheet ( Hoja de datos )
| Número de pieza | KU056N03Q | |
| Descripción | N-Ch Trench MOSFET | |
| Fabricantes | KEC semiconductor | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for DC/DC Converter and Battery pack.
FEATURES
VDSS=30V, ID=17A.
Drain to Source On Resistance.
RDS(ON)=5.6m (Max.) @ VGS=10V
RDS(ON)=9.7m (Max.) @ VGS=4.5V
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
DC@Ta=25 (Note 1)
Pulsed
Drain Power Dissipation @Ta=25 (Note 1)
Maximum Junction Temperature
Storage Temperature Range
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
30
20
17
68
2.5
150
-55~150
V
V
A
A
W
Thermal Resistance, Junction to Ambient (Note 1) RthJA
50
/W
Note1) Surface Mounted on 1 1 FR4 Board, t 10sec.
KU056N03Qwww.DataSheet4U.com
N-Ch Trench MOSFET
DP
H
T
G
L
A
85
DIM
A
B1
B2
D
MILLIMETERS
4.85 +_ 0.2
3.94 +_ 0.2
6.02+_ 0.3
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H 1.63 +_ 0.2
14
L 0.65 +_ 0.2
P 1.27
T 0.20+0.1/-0.05
FLP-8
KU056N
03Q
PIN CONNECTION (TOP VIEW)
S1
S2
S3
G4
8D
7D
6D
5D
1
2
3
4
8
7
6
5
2010. 6. 17
Revision No : 0
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KU056N03Q.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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