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PDF TPC8021-H Data sheet ( Hoja de datos )
| Número de pieza | TPC8021-H | |
| Descripción | High-Efficiency DC/DC Converter Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8021-H
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8021-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 3.6 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 13.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| =19 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
30
30
±20
11
44
1.9
1.0
79
11
0.14
150
−55 to 150
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8765
1234
Note: Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-16
1 page  
RDS (ON) – Ta
40
Common source
Pulse test
32
ID = 2.8A,5.5A,11A
24
VGS = 4.5 V
16
ID = 2.8A,5.5A,11A
VGS = 10 V
8
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8021-H
www.DataSheet4U.com
IDR – VDS
100
Common source
Ta = 25°C
Pulse test
10
3
10
4.5
1
VGS = 0 V
1
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Coss
100
10
0.1
Common source
Ta = 25°C
f = 1 MHz
VGS = 0 V
1
Crss
10
Drain-source voltage VDS (V)
100
Vth – Ta
2.0
1.6
1.2
0.8
Common source
0.4 VDS = 10 V
ID = 1 mA
0.0
−80
Pulse test
−40 0
40 80 120
Ambient temperature Ta (°C)
160
2.0
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50
Common source
ID = 11 A
40 Ta = 25°C
Pulse test
30
VDS
20
VDD = 6 V
24 V
12 V
10
0
0 4 8 12 16
Total gate charge Qg (nC)
20
16
12
8
4
0
20
5 2006-11-16
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8021-H.PDF ] | |
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