|
|
|
부품번호 | EIC4853-25 기능 |
|
|
기능 | 4.8-5.30 GHz 25-Watt Internally Matched Power FET | ||
제조업체 | Excelics Semiconductor | ||
로고 | |||
www.DataSheet4U.com
EIC4853-25
4.8-5.30 GHz 25-Watt Internally Matched Power FET
FEATURES
• 4.80 – 5.30GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +44.5 dBm Output Power at 1dB Compression
• 9.5 dB Power Gain at 1dB Compression
• 36% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
2X 0.079 MIN
4X 0.102
0.945 0.803
Excelics
EIC4853-25
YYWW
SN
0.010
0.158
0.055
0.315
0.685
0.617
0.024
0.580
0.004
0.095
0.055
0.168
ELECTRICAL CHARACTERISTICS (Tb = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN TYP MAX UNITS
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 4.80-5.30 GHz
VDS = 10 V, IDSQ ≈ 6500mA
Gain at 1dB Compression
f = 4.80-5.30 GHz
VDS = 10 V, IDSQ ≈ 6500mA
Gain Flatness
f = 4.80-5.30 GHz
VDS = 10 V, IDSQ ≈ 6500mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 6500mA
f = 4.80-5.30 GHz
43.5 44.5
dBm
9 10
dB
±0.6 dB
36 %
Id1dB
Drain Current at 1dB Compression
f = 4.80-5.30 GHz
7050
8300
mA
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
11 16
A
VP Pinch-off Voltage
RTH Thermal Resistance2
VDS = 3 V, IDS = 130 mA
-2.5 -4.0
V
1.4 1.8 oC/W
1. Tested with 15 Ohm gate resistor, forward and reverse gate current should not exceed 130mA and -10.5mA respectively
2. Overall Rth depends on case mounting.
MAXIMUM RATING AT Tb = 25°C1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds
Drain-Source Voltage
15
Vgs
Gate-Source Voltage
-5
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
38 dBm
175 oC
-65 to +175 oC
Pt Total Power Dissipation 83W
Note: 1. Operating the device beyond the absolute maximum rating may cause permanent damage.
2. Operating beyond the absolute maximum ratings may reduce MTTF of the device.
OPERATING2
10V
-4V
@ 3dB Compression
175 oC
-65 to +175 oC
83W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Page 1 of 2
Revision. 01
| |||
구 성 | 총 2 페이지수 | ||
다운로드 | [ EIC4853-25.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
EIC4853-25 | 4.8-5.30 GHz 25-Watt Internally Matched Power FET | Excelics Semiconductor |
EIC4853-25 | 4.8-5.30 GHz 25-Watt Internally Matched Power FET | Excelics Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |