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RB051M-2Y 데이터시트 PDF




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부품번호 RB051M-2Y 기능
기능 Schottky Barrier Diode
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RB051M-2Y 데이터시트, 핀배열, 회로
Schottky Barrier Diode
RB051M-2Y
Applications
General rectification
Dimensions(Unit : mm)
Features
1)Small power mold type.PMDU
2)Ultra Low VF
3)High reliability
Construction
Silicon epitaxial planer
Taping specifications(Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
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Land size figure(Unit : mm)
1.2
PMDU
Structure
0.25±0.05
1.81±0.1
4.0±0.1
φ1.0±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current(*1)
VRM
VR
Io
Forward current surge peak 60Hz1cyc
Junction temperature
IFSM
Tj
Storage temperature
Tstg
(*1)Mounting on alumina board. Tc=95C Max.
Limits
20
20
3
30
125
-40 to +125
1.5MAX
Unit
V
V
A
A
C
C
Electrical characteristics(Ta=25C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF - - 0.46
IR - - 0.9
Unit Conditions
V IF=3A
mA VR=20V
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©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.01 - Rev.A




RB051M-2Y pdf, 반도체, 판매, 대치품
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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© 2010 ROHM Co., Ltd. All rights reserved.
R1010A

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관련 데이터시트

부품번호상세설명 및 기능제조사
RB051M-2Y

Schottky Barrier Diode

ROHM Semiconductor
ROHM Semiconductor

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