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부품번호 | RRH100P03 기능 |
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기능 | 4V Drive Pch MOSFET | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 6 페이지수
www.DataSheet4U.com
4V Drive Pch MOSFET
RRH100P03
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRH100P03
Taping
TB
2500
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP∗1
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Is
Isp ∗1
PD∗2
Channel temperature
Tch
Range of storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Tstg
Limits
−30
±20
±10
±40
−1.6
−40
2.0
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to Ambient
∗ Mounted on a ceramic board.
Symbol
Rth (ch-a)∗
Limits
62.5
Unit
°C / W
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Inner circuit
(8) (7)
(6)
(5)
∗2
∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
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○c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.02 - Rev.A
RRH100P03
100
Ta =25C
P uls e d
ID = -10.0A
50
ID = -5.0A
0
0 5 10 15
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
10000
1000
100
td(off)
tf
Ta=25C
VDD= -15V
VGS= -10V
RG=10
Pulsed
10 tr td(on)
1
0.01
0.1 1 10 100
DRAIN-CURRENT : -ID[A]
Fig.11 Switching Characteristics
Data Sheet
www.DataSheet4U.com
10
Ta=25C
8 VDD= -15V
ID= -10A
RG=10
6 Pulsed
4
2
0
0 10 20 30 40 50 60 70
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
Ciss
1000
Crss
Coss
100
10
0.01
0.1
1
Ta=25C
f=1MHz
VGS=0V
10 100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
1000
100
Operation in this area is
limited by RDS(ON)
PW=100us
10
PW=1ms
1 PW = 10ms
0.1
0.01
Ta = 25C
Single Pulse
MOUNTED ON CERAMIC BOARD
DC operation
0.1 1
10 100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.14 Maximum Safe Operating Aera
10
1
0.1
0.01
0.001
0.001
Ta = 25C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 62.5C/W
<Mounted on a CERAMIC board>
0.01 0.1
1
10 100 1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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○c 2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.02 - Rev.A
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부품번호 | 상세설명 및 기능 | 제조사 |
RRH100P03 | 4V Drive Pch MOSFET | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |