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PDF J516 Data sheet ( Hoja de datos )
| Número de pieza | J516 | |
| Descripción | P-Channel MOSFET ( Transistor ) - 2SJ516 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de J516 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SJ516
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSV)
2SJ516
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
z Low drain-source ON resistance : RDS (ON) = 0.6 Ω (typ.)
z High forward transfer admittance : |Yfs| = 5.3 S (typ.)
z Low leakage current : IDSS = −100 μA (max) (VDS = −250 V)
z Enhancement mode : Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
−250
−250
±20
−6.5
−13
35
157
−6.5
3.5
150
−55 to 150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c)
Rth (ch−a)
3.57 °C / W
62.5 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 6.3 mH, RG = 25 Ω, IAR = −6.5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2009-09-29
1 page  
2SJ516
5 2009-09-29
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet J516.PDF ] | |
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