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BU7481SG 데이터시트 PDF




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부품번호 BU7481SG 기능
기능 SILICON MONOLITHIC INTEGRATED CIRCUIT
제조업체 ROHM Semiconductor
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BU7481SG 데이터시트, 핀배열, 회로
www.DataSheet4U.com 1/4
STRUCTURE
SILICON MONOLITHIC INTEGRATED CIRCUIT
FUNCTION
HIGH SPEED SINGLE CMOS OPERATIONAL AMPLIFIER
PRODUCT SERIES BU7481G
BU7481SG
FEATURES
・Wide output voltage range(VSS~VDD)
・Wide operating temperature range (BU7481SG:-40[℃]~105[℃])
・Low input bias current(1[pA] typ.)
・Slew Rate(3.2[V/μs] typ.)
・Low supply current(420[μA] typ.)
Low power supply voltage operation(1.8[V]~5.5[V])
○ABSOLUTE MAXIMUM RATINGS(Ta=25[℃])
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD-VSS
+7 V
Power dissipation
Pd
540(*1)(*2)
mW
Differential Input Voltage(*3)
Vid
VDD-VSS
V
Input Common-mode Voltage Range
Operating Temperature range
Topr
Vicm
BU7481
BU7481S
(VSS-0.3)~VDD+0.3
-40~+85
-40~+105
V
Storage Temperature Range
Tstg
-55~+125
Maximum junction Temperature
Tjmax
+125
・This IC is not designed for protection against radioactive rays.
(*1) To use at temperature above Ta=25[℃] reduce 5.4[mW].
(*2) Mounted on a glass epoxy PCB(70[mm]×70[mm]×1.6[mm]).
(*3) The voltage difference between inverting input and non-inverting input is the differential input voltage.
Then input terminal voltage is set to more than VSS.
○OPERATING CONDITION(BU7481G:Ta=-40[℃]~+85[℃] BU7481SG:Ta=-40[℃]~+105[℃])
Parameter
Symbol
Rating
Supply Voltage
VDD +1.8~+5.5 (Single Supply)
Unit
V
REV. B




BU7481SG pdf, 반도체, 판매, 대치품
www.DataSheet4U.com 4/4
(6) Output short circuit
If short circuit occurs between the output terminal and VDD terminal, excessive
in output current may flow and generate heat, causing destruction of the IC. Take due care.
(7) Using under strong electromagnetic field
Be careful when using the IC under strong electromagnetic field because it may malfunction.
(8) Usage of IC
When stress is applied to the IC through warp of the printed circuit board,
The characteristics may fluctuate due to the piezo effect.
Be careful of the warp of the printed circuit board.
(9) Testing IC on the set board
When testing IC on the set board, in cases where the capacitor is connected to the low impedance,
make sure to discharge per fabrication because there is a possibility that IC may be damaged by stress.
When removing IC from the set board, it is essential to cut supply voltage.
As a countermeasure against the static electricity, observe proper grounding during fabrication process
and take due care when carrying and storage it.
(10) The IC destruction caused by capacitive load
The transistors in circuits may be damaged when VDD terminal and VSS terminal is shorted with the charged
output terminal capacitor.
When IC is used as a operational amplifier or as an application circuit, where oscillation is not activated
by an output capacitor,the output capacitor must be kept below 0.1[μF] in order to prevent the damage
mentioned above.
(11) Decupling capacitor
Insert the deculing capacitance between VDD and VSS, for stable operation of operational amplifier.
(12) Latch up
Be careful of input vltage that exceed the VDD and VSS. When CMOS device have sometimes occur
latch up operation. And protect the IC from abnormaly noise
REV. B

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관련 데이터시트

부품번호상세설명 및 기능제조사
BU7481SG

SILICON MONOLITHIC INTEGRATED CIRCUIT

ROHM Semiconductor
ROHM Semiconductor

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