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Datasheet EB13D7 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | EB13D7 | OSCILLATOR
EB13D7 Series
• RoHS Compliant (Pb-Free) • Low Jitter • Ceramic SMD package • 3.3V supply voltage • LVHCMOS • Stability to ±50ppm • Standby Function • Available in tube or tape and reel
EB13D7
H 1.6 L 7.0 W 5.0
OSCILLATOR
NOTES
______________________________ |  ECLIPTEK | oscillator |
EB1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | EB102 | Transistor Shenzhen SYS Semiconductors Co., LTD.
Product Specification
EB SERIES TRANSISTORS
FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY FLUORESCENT LAMP HIGH SPEED SWITCHING ELECTRONIC BALLAST WIDE SOA
EB102
Absolute Maximum Ratings
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter- Bas  SYS Semiconductors transistor | | |
| 2 | EB102DL | Transistor SY semiconductors
● 特点
耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
FEATURES ▲HIGH
Shenzhen SY Semiconductors Co.，LTD. EB102DL
CAPABILTY
VOLTAGE
▲HIGH
SPEED
SWITCHING
● 应用
节能灯、电子镇流器 电子变压器、开关电源
▲WIDE SOA ▲RoHS COM  SY Semiconductors transistor | | |
| 3 | EB102H | EB SERIES TRANSISTORS Shenzhen Shengyuan Semiconductors Co., LTD.
Product Specification
EB SERIES TRANSISTORS
FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY FLUORESCENT LAMP HIGH SPEED SWITCHING ELECTRONIC BALLAST WIDE SOA
EB102
Absolute Maximum Ratings
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitte  Shengyuan transistor | | |
| 4 | EB105 | 800MHz AMPLIFIER MOTOROLA
Order this document by EB105/D
SEMICONDUCTOR
ENGINEERING BULLETIN
EB105
A 30 WATT, 800 MHz AMPLIFIER DESIGN
Prepared by: Alan Wood Semiconductor Product Sector
INTRODUCTION
Simplicity and compactness mark the design of this 30 Watt amplifier des igned for the 800 MHz mobile communicati  Motorola Semiconductors amplifier | | |
| 5 | EB11 | Duo Diode page 1 2 3
EB11
sheet 100139a-a 100139a-b FP
date 1939.01 1939.01 2000.02.04
 TELEFUNKEN diode | | |
| 6 | EB12VN5 | Low Capacitance Single-Line Bi-Directional ESD protection Diode Low Capacitance Single-Line Bi-Directional ESD
EBXXVN5
Low Capacitance Single-Line Bi-Directional ESD protection Diode
■DEDESCRIPTION
■FEATURE
The EBXXVN5 Series is designed to protect voltage 100Watts Peak Pulse Power per line(tp=8/20μs) sensitive components that require low capacitan  Semtron diode | | |
| 7 | EB12VN5-TRG | Low Capacitance Single-Line Bi-Directional ESD protection Diode Low Capacitance Single-Line Bi-Directional ESD
EBXXVN5
Low Capacitance Single-Line Bi-Directional ESD protection Diode
■DEDESCRIPTION
■FEATURE
The EBXXVN5 Series is designed to protect voltage 100Watts Peak Pulse Power per line(tp=8/20μs) sensitive components that require low capacitan Semtron diode | |
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| Número de pieza | Descripción | Fabricantes | |
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