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PDF CSPEMI201AG Data sheet ( Hoja de datos )

Número de pieza CSPEMI201AG
Descripción 2 Channel Headset Speaker EMI Filter
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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2 Channel Headset Speaker EMI Filterwww.DataSheet4U.com
with ESD Protection
CSPEMI201AG
Features
• Two channels of EMI filtering
• Pi-style EMI filters in a capacitor-resistor-
capacitor (C-R-C) network
• Greater than 40dB attenuation at 1GHz
• +8kV ESD protection on each channel
(IEC 61000-4-2 Level 4, contact discharge)
• +15kV ESD protection in each channel (HBM)
• Supports AC signals—ideal for audio applications
• Extremely low lead inductance for optimum filter
and ESD performance
• 5-bump, 0.930mm X 1.410mm footprint
Chip Scale Package (CSP)
• RoHS compliant (lead-free) finishing
Product Description
The CSPEMI201AG is a dual low-pass filter array
integrating two pi-style filters (C-R-C) that reduce
EMI/RFI emissions while at the same time providing
ESD protection. This part is custom-designed to
interface with a speaker port on a cellular telephone
or similar device. Each high quality filter provides
more than 35dB attenuation in the 800-2700 MHz
range. These pi-style filters support bidirectional
filtering, controlling EMI both to and from a speaker
element. They also support bipolar signals with a
cutoff frequency of 31MHz, enabling audio signals to
pass through without distortion.
Applications
• EMI filtering and ESD protection for headset
speaker ports
• Wireless Handsets
• Handheld PCs / PDAs
• MP3 Players
• Digital Camcorders
• Notebooks
• Desktop PCs
In addition, the CSPEMI201AG provides a very high
level of protection for sensitive electronic components
that may be subjected to electrostatic discharge
(ESD). The CSPEMI201AG can safely dissipate
ESD strikes of +8kV, the maximum requirement of
the IEC 61000-4-2 international standard. Using the
MIL-STD-883 (Method 3015) specification for Human
Body Model (HBM) ESD, the device provides
protection for contact discharges to greater than
+15kV.
The CSPEMI201AG is particularly well-suited for
portable electronics (e.g., cellular telephones, PDAs,
notebook computers) because of its small package
and low weight. The CSPEMI201AG is available in a
space-saving, low-profile Chip Scale Package with
RoHS compliant lead-free finishing.
©2010 SCILLC. All rights reserved.
April 2010 Rev. 3
Publication Order Number:
CSPEMI201AG/D

1 page




CSPEMI201AG pdf
CSPEMI201AG
www.DataSheet4U.com
ELECTRICAL OPERATING CHARACTERISTICS1
SYMBOL PARAMETER
R Resistance
CONDITIONS
C Capacitance
I Diode Leakage Current
LEAK
VSIG Signal Voltage
Positive Clamp
Negative Clamp
V =5.0V
IN
ILOAD = 10mA
V In-system ESD Withstand Voltage
ESD
Note 2
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
VCL Clamping Voltage during ESD Discharge Notes 2 and 3
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
fC Cut-off frequency
Z
SOURCE
=
50Ω,
Z
LOAD
=
50Ω
R = 10Ω, C = 100pF
MIN TYP
9 10
80 100
MAX
11
120
1.0
57
-15 -10
15
-5
±15
±8
+15
-19
31
UNITS
Ω
pF
μA
V
V
kV
kV
V
V
MHz
Note 1: TA=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin
A1, then clamping voltage is measured at Pin C1.
Rev. 3 | Page 5 of 9 | www.onsemi.com

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