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MP1000 PDF 데이터시트 ( Data , Function )

부품번호 MP1000 기능
기능 (MP1000 - MP1010) Silicon Bridge Rectifiers
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MP1000 데이터시트, 핀배열, 회로
Silicon Bridge Rectifiers
MP1000 Thru 1010
Reverse Voltage: 50 - 1000 Volts
Forward Current: 10 Amp
Features
- Diffused Junction
- High Current Capability
- High Case Dielectric Strength
- High Surge Current Capability
- Ideal for Printed Circuit Board Application
- Plastic Material has Underwriters
Laboratory Flammability Classification
94V-O
Mechanical Data
- Case: Molded Plastic
- Terminals: Plated Leads Solderable per MIL
STD-202, Method 208
- Weight: 5.4 grams (approx.)
- Mounting Position: Through Hole for #6
Screw
- Mounting Torque: 5.0 Inch-pounds Maximum
www.DataSheet4U.com
COMCHIP
www.comchiptech.com
J
G
H
+~
E
~-
E
D
Metal Heat Sink
MP-10
MP-10
Dim Min
Max
A A 14.73 15.75
B 5.80 6.90
C 19.00
-
D 1.00 Ø Typical
E 5.11 6.14
Hole for # 6 screw
G
C
3.60
4.00
H 10.30 11.30
B J 2.38 x 45oC Typical
All Dimensions in mm
Maximum Ratings and Electrical Characterics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Rever se Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note1) @ TA = 50°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage (per element) @IF = 5.0A
Peak Reverse Current
@TC = 25°C
At Rated DC Blocking Voltage @TC = 100°C
I2t Rating for Fusing (t < 8.3ms) (Note2)
Typical Junction Capacitance (Note3)
Typical Thermal Resistance (Note4)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
MP
1000
50
35
MP
1001
100
70
MP
1002
200
140
MP
1004
400
280
10
MP
1006
600
420
MP
1008
800
560
MP
1010
1000
700
UNIT
V
V
A
IFSM 200 A
VFM
IR
I2t
Cj
R JC
Tj, TSTG
1.1
10
1.0
64
110
7.5
-65 to +150
V
uA
mA
A2s
pF
K/W
°C
Note: 1. Non-repetitive for t > 1ms and < 8.3ms.
2. Thermal resistance junction to am bient mounted on PC board with 13.0 x 13.0 x 0.03mm thick land areas.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
4. Thermal resistance junction to cas e per element.
MDS0309003A
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