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N02L6181A PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 N02L6181A
기능 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
제조업체 ON Semiconductor
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N02L6181A 데이터시트, 핀배열, 회로
N02L6181Awww.DataSheet4U.com
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128Kx16 bit
Features
Overview
The N02L6181A is an integrated memory device
containing a 2 Mbit Static Random Access Memory
organized as 131,072 words by 16 bits. The device
is designed and fabricated using ON
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The base design is the same as ON
Semiconductor’s N02L63W3A, which is processed
to operate at higher voltages. The device operates
with a single chip enable (CE) control and output
enable (OE) to allow for easy memory expansion.
Byte controls (UB and LB) allow the upper and
lower bytes to be accessed independently. The
N02L6181A is optimal for various applications
where low-power is critical such as battery backup
and hand-held devices. The device can operate
over a very wide temperature range of -40oC to
+85oC and is available in JEDEC standard
packages compatible with other standard 128Kb x
16 SRAMs.
Product Family
• Single Wide Power Supply Range
1.65 to 2.2 Volts
• Very low standby current
0.5µA at 1.8V (Typical)
• Very low operating current
1.4mA at 1.8V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package
Part Number
N02L6181AB
N02L6181AB2
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Max Max
48 - BGA
Green 48-BGA
-40oC to +85oC 1.65V - 2.2V
70 and 85ns
@ 1.65V
10 µA
3 mA @ 1MHz
©2008 SCILLC. All rights reserved.
July 2008 - Rev. 4
Publication Order Number:
N02L6181A/D




N02L6181A pdf, 반도체, 판매, 대치품
N02L6181A
www.DataSheet4U.com
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 3.0
500
–40 to 125
-40 to +85
240oC, 10sec(Lead only)
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Typ1
Max Unit
Supply Voltage
VCC
1.65 1.8
2.2 V
Data Retention Voltage
VDR Chip Disabled2
1.2
2.2 V
Input High Voltage
VIH
0.7Vcc
VCC+0.3 V
Input Low Voltage
VIL
–0.3 0.3Vcc V
Output High Voltage
VOH
IOH = 0.2mA
VCC–0.2
V
Output Low Voltage
VOL IOL = -0.2mA
0.3 V
Input Leakage Current ILI VIN = 0 to VCC
0.5 µA
Output Leakage Current
ILO OE = VIH or Chip Disabled
0.5 µA
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
ICC1
VCC=2.2 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
1.4 3.0 mA
Read/Write Operating Supply Current
@ 70 ns Cycle Time2
ICC2
VCC=2.2 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
8.0 17.0 mA
Page Mode Operating Supply Current
@ 70ns Cycle Time2 (Refer to Power
Savings with Page Mode Operation
diagram)
ICC3
VCC=2.2V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
2.0 4.0 mA
Read/Write Quiescent Operating Sup-
ply Current3
ICC4
VCC=2.2V, VIN=VIH or VIL
Chip Enabled, IOUT = 0,
f=0
0.1 mA
Maximum Standby Current3
VIN = VCC or 0V
ISB1 Chip Disabled
tA= 85oC, VCC = 2.2 V
0.5 10.0 µA
Maximum Data Retention Current3
IDR
VCC = 1.2V, VIN = VCC or 0
Chip Disabled, tA= 85oC
5.0 µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and are not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
3. This device assumes a standby mode if the chip is disabled (CE high). In order to achieve low standby current all inputs must be
within 0.2 volts of either VCC or VSS
Rev. 4 | Page 4 of 11 | www.onsemi.com

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N02L6181A 전자부품, 판매, 대치품
N02L6181A
Timing of Read Cycle (CE = OE = VIL, WE = VIH)
tRC
Address
tAA
tOH
Data Out
Previous Data Valid
Timing Waveform of Read Cycle (WE= VIH)
tRC
Address
CE
OE
LB, UB
Data Out
tAA
tCO
tLZ
tOE
tOLZ
tLBLZ, tUBLZ
High-Z
tLB, tUB
www.DataSheet4U.com
Data Valid
tHZ
tOHZ
tLBHZ, tUBHZ
Data Valid
Rev. 4 | Page 7 of 11 | www.onsemi.com

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부품번호상세설명 및 기능제조사
N02L6181A

2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit

ON Semiconductor
ON Semiconductor

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