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N02L63W3A 데이터시트 PDF




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부품번호 N02L63W3A 기능
기능 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
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N02L63W3A 데이터시트, 핀배열, 회로
N02L63W3Awww.DataSheet4U.com
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16bit
Overview
Features
The N02L63W3A is an integrated memory device
containing a 2 Mbit Static Random Access Memory
organized as 131,072 words by 16 bits. The device
is designed and fabricated using ON
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N02L63W3A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs.
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Part Number
N02L63W3AB
N02L63W3AT
N02L63W3AB2
N02L63W3AT2
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
48 - BGA
44 - TSOP II
48 - BGA Green
-40oC to +85oC
2.3V - 3.6V
55ns @ 2.7V
70ns @ 2.3V
2 µA
2 mA @ 1MHz
44 - TSOP II Green
©2008 SCILLC. All rights reserved.
July 2008 - Rev. 15
Publication Order Number:
N02L63W3A/D




N02L63W3A pdf, 반도체, 판매, 대치품
N02L63W3A
www.DataSheet4U.com
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 4.5
500
–40 to 125
-40 to +85
260oC, 10sec
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Typ1
Max Unit
Supply Voltage
VCC
2.3 3.6 V
Data Retention Voltage
VDR Chip Disabled2
1.8
V
Input High Voltage
VIH
1.8 VCC+0.3 V
Input Low Voltage
VIL
–0.3 0.6 V
Output High Voltage
VOH
IOH = 0.2mA
VCC–0.2
V
Output Low Voltage
VOL IOL = -0.2mA
0.2 V
Input Leakage Current ILI VIN = 0 to VCC
0.5 µA
Output Leakage Current
ILO OE = VIH or Chip Disabled
0.5 µA
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
ICC1
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
2.0 4.0 mA
Read/Write Operating Supply Current
@ 70 ns Cycle Time2
ICC2
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
12 16.0 mA
Page Mode Operating Supply Current
@ 70ns Cycle Time2 (Refer to Power
Savings with Page Mode Operation
ICC3
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
4
mA
diagram)
Read/Write Quiescent Operating Sup-
ply Current3
ICC4
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0,
f=0
3.0 mA
Maximum Standby Current3
VIN = VCC or 0V
ISB1 Chip Disabled
tA= 85oC, VCC = 3.6 V
2.0 20 µA
Maximum Data Retention Current3
IDR
VCC = 1.8V, VIN = VCC or 0
Chip Disabled, tA= 85oC
10 µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and are not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
3. This device assumes a standby mode if the chip is disabled (CE high). In order to achieve low standby current all inputs must be
within 0.2 volts of either VCC or VSS
Rev. 15 | Page 4 of 11 | www.onsemi.com

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N02L63W3A 전자부품, 판매, 대치품
N02L63W3A
Timing of Read Cycle (CE = OE = VIL, WE = VIH)
tRC
Address
tAA
tOH
Data Out
Previous Data Valid
Timing Waveform of Read Cycle (WE= VIH)
tRC
Address
CE
OE
LB, UB
Data Out
tAA
tCO
tLZ
tOE
tOLZ
tLBLZ, tUBLZ
High-Z
tLB, tUB
www.DataSheet4U.com
Data Valid
tHZ
tOHZ
tLBHZ, tUBHZ
Data Valid
Rev. 15 | Page 7 of 11 | www.onsemi.com

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부품번호상세설명 및 기능제조사
N02L63W3A

2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit

ON Semiconductor
ON Semiconductor

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