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N04Q1618C2B 데이터시트 PDF




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부품번호 N04Q1618C2B 기능
기능 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ
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N04Q1618C2B 데이터시트, 핀배열, 회로
AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
N04Q1618C2B
Advance wInwwfo.DramtaShaeetti4oU.ncom
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual
Vcc and VccQ for Ultimate Power Reduction
256K×16 bit POWER SAVER TECHNOLOGY
Overview
Features
The N04Q16yyC2B are ultra-low power memory
devices containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using AMI
Semiconductor’s advanced CMOS technology to
provide ultra-low active and standby power. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently. The 4Mb SRAM is
optimized for the ultimate in low power and is
suited for various applications where ultra-low-
power is critical such as medical applications,
battery backup and power sensitive hand-held
devices. The unique page mode operation saves
active operating power and the dual power supply
rails allow very low voltage operation while
maintaining 3V I/O capability. The device can
operate over a very wide temperature range of 0oC
to +70oC for the lowest power and is also available
in the industrial range of -40oC to +85oC. The
devices are available in standard BGA and TSOP
packages. The devices are also available as
Known Good Die (KGD) for embedded package
applications.
Product Options
• Multiple Power Supply Ranges
1.1V - 1.3V
1.65V - 1.95V
• Dual Vcc / VccQ Power Supplies
1.2V Vcc with 3V VccQ
1.8V Vcc with 3V VccQ
• Very low standby current
50nA typical for 1.2V operation
• Very low operating current
400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
80µA typical for 1.2V operation at 1µs
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Automatic power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant
Part Number
Typical
Standby
Current
Vcc
(V)
VccQ
(V)
Speed
Typical
Operating
(nS) Operating Current Temperature
N04Q1612C2Bx-15C1
N04Q1618C2Bx-15C1
N04Q1618C2Bx-70C
50nA
50nA
200nA
1.2 1.2, 1.8, 3.0 150ns
150ns
1.8 1.8, 3.0 70ns
0.4 mA @ 1MHz
0.4 mA @ 1MHz
0.6 mA @ 1MHz
0oC to +70oC
N04Q1618C2Bx-85C 200nA
85ns 0.6 mA @ 1MHz
1. Part numbers are under development. Please contact your local sales representative for details.
Stock No. 23451-D 11/06
The specification is ADVANCE INFORMATION and subject to change without notice.
1




N04Q1618C2B pdf, 반도체, 판매, 대치품
AMI Semiconductor, Inc.
N04Q1618C2B
Advance wInwwfo.DramtaShaeetti4oU.ncom
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 4
500
–40 to 125
-40 to +85
260oC, 10sec
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range, 0o - 70o C)
Item
Symbol
Device
Conditions
Min. Typ Max Unit
Core Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
VCC
N04Q1612... 1.2V Core Device
N04Q1618... 1.8V Core Device
1.1
1.65
1.2
1.8
1.3
1.95
V
VCCQ
N04Q1612... 1.2V Core Device
N04Q1618... 1.8V Core Device
1.1
1.65
3.3
3.3
V
VIH
0.8 x
VCCQ
VCC+0.3 V
VIL
–0.3
0.2 x
VCCQ
VOH
IOH = -100uA
VCC–0.2
V
VOL IOL = 100uA
0.2 V
ILI VIN = 0 to VCC
0.5 µA
ILO
OE = VIH or Chip
Disabled
0.5 µA
Stock No. 23451-D 11/06
The specification is ADVANCE INFORMATION and subject to change without notice.
4

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N04Q1618C2B 전자부품, 판매, 대치품
AMI Semiconductor, Inc.
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
N04Q1618C2B
Advance wInfworwma. tDiona t a S h e e
0.1VCC to 0.9 VCC
5ns
0.5 VCC
CL = 30pF
0 to +70oC
Timing
Item
Read Cycle Time
Address Access Time
Page Mode Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Symbol
tRC
tAA
tAAP
tCO
tOE
tBE
tLZ
tOLZ
tBZ
tHZ
tOHZ
tBHZ
tOH
-70
Min. Max.
70
70
70
70
35
70
10
5
10
0 20
0 20
0 20
10
-85
Min. Max.
85
85
85
85
45
85
10
5
10
0 20
0 20
0 20
10
-150
Min. Max.
150
150
150
150
75
150
10
5
10
0 20
0 20
0 20
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
tWC
tCW
tAW
tBW,
tWP
tAS
tWR
tWHZ
tDW
tDH
tOW
70 85 150 ns
50 60 120 ns
50 60 120 ns
50 60 120 ns
40 50 100 ns
0 0 0 ns
0 0 0 ns
20 20 20 ns
40 50 100 ns
0 0 0 ns
5 5 5 ns
Stock No. 23451-D 11/06
The specification is ADVANCE INFORMATION and subject to change without notice.
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부품번호상세설명 및 기능제조사
N04Q1618C2B

4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ

AMI SEMICONDUCTOR
AMI SEMICONDUCTOR

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