BUK664R8-75C Datasheet PDF - NXP Semiconductors
| Part Number | BUK664R8-75C | |
| Description | N-channel TrenchMOS FET | |
| Manufacturers | NXP Semiconductors | |
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BUK664R8-75C
N-channel TrenchMOS FET
Rev. 01 — 6 July 2010
www.DataSheet4U.com
Objective data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V Automotive
systems
Automotive DC-DC converter
Engine management
Motors, lamps and solenoid control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 5
EDS(AL)S
non-repetitive
ID = 100 A; Vsup ≤ 75 V;
drain-source avalanche RGS = 50 Ω; VGS = 10 V;
energy
Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 75 V
[1] - - 100 A
- - 262 W
- 4.1 4.8 mΩ
- - 398 mJ
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NXP Semiconductors
www.DataSheet4U.com
BUK664R8-75C
N-channel TrenchMOS FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 3
vertical in free air
Min Typ Max Unit
- - 0.57 K/W
- 60 - K/W
1
Zth (j-mb)
(K/W)
0.5
0.2
10-1
0.1
0.05
0.02
10-2
003aac792
P δ = tp
T
single shot
tp t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1 tp (s)
1
Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK664R8-75C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 July 2010
© NXP B.V. 2010. All rights reserved.
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