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PDF BUK655R0-75C Data sheet ( Hoja de datos )
| Número de pieza | BUK655R0-75C | |
| Descripción | N-channel TrenchMOS FET | |
| Fabricantes | NXP Semiconductors | |
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BUK655R0-75C
N-channel TrenchMOS FET
Rev. 01 — 6 July 2010
www.DataSheet4U.com
Objective data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V Automotive
systems
Automotive DC-DC converter
Engine management
Motors, lamps and solenoid control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 5
EDS(AL)S
non-repetitive
ID = 100 A; Vsup ≤ 75 V;
drain-source avalanche RGS = 50 Ω; VGS = 10 V;
energy
Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 75 V
[1] - - 100 A
- - 262 W
- 4.3 5 mΩ
- - 398 mJ
1 page  
NXP Semiconductors
www.DataSheet4U.com
BUK655R0-75C
N-channel TrenchMOS FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction see Figure 3
to mounting base
thermal resistance from junction vertical in free air
to ambient
Min Typ Max Unit
- - 0.57 K/W
- 60 - K/W
1
Zth (j-mb)
(K/W)
0.5
0.2
10-1
0.1
0.05
0.02
10-2
003aac792
P δ = tp
T
single shot
tp t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1 tp (s)
1
Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK655R0-75C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 July 2010
© NXP B.V. 2010. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
www.DataSheet4U.com
BUK655R0-75C
N-channel TrenchMOS FET
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BUK655R0-75C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 July 2010
© NXP B.V. 2010. All rights reserved.
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