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부품번호 | BUK6E4R0-75C 기능 |
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기능 | N-channel TrenchMOS FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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BUK6E4R0-75C
N-channel TrenchMOS FET
Rev. 01 — 9 July 2010
www.DataSheet4U.com
Objective data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V Automotive
systems
Automotive DC-DC converter
Engine management
Motors, lamps and solenoid control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
drain-source
voltage
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 5
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 100 A; Vsup ≤ 75 V;
drain-source
RGS = 50 Ω; VGS = 10 V;
avalanche energy Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 75 V
[1] - - 100 A
- - 306 W
- 3.4 4 mΩ
- - 858 mJ
NXP Semiconductors
200
ID
(A)
150
003aac382
100
50
(1)
0
0 50 100 150 200
Tmb (°C)
www.DataSheet4U.com
BUK6E4R0-75C
N-channel TrenchMOS FET
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 3
vertical in free air
Min Typ Max Unit
- - 0.45 K/W
- 50 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2
003aac354
P
tp
δ=
T
single shot
tp
T
t
10-3
10-6
10-5
10-4
10-3
10-2
10-1 tp (s)
1
Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6E4R0-75C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 July 2010
© NXP B.V. 2010. All rights reserved.
4 of 11
4페이지 NXP Semiconductors
7. Package outline
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
www.DataSheet4U.com
BUK6E4R0-75C
N-channel TrenchMOS FET
SOT226
D1 E
D
b1
L
L1
123
ee
b
A
A1
mounting
base
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b
b1
c
D
max
D1
E
e
L
L1 Q
mm 4.5 1.40 0.85 1.3 0.7
4.1 1.27 0.60 1.0 0.4
11
1.6
1.2
10.3
9.7
2.54
15.0
13.5
3.30
2.79
2.6
2.2
OUTLINE
VERSION
SOT226
IEC
REFERENCES
JEDEC
JEITA
TO-262
EUROPEAN
PROJECTION
Fig 6. Package outline SOT226 (I2PAK)
ISSUE DATE
06-02-14
09-08-25
BUK6E4R0-75C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 July 2010
© NXP B.V. 2010. All rights reserved.
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