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BUK6E4R0-75C 데이터시트 PDF




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부품번호 BUK6E4R0-75C 기능
기능 N-channel TrenchMOS FET
제조업체 NXP Semiconductors
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BUK6E4R0-75C 데이터시트, 핀배열, 회로
BUK6E4R0-75C
N-channel TrenchMOS FET
Rev. 01 — 9 July 2010
www.DataSheet4U.com
Objective data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for intermediate level gate
drive sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V, 24 V and 42 V Automotive
systems
„ Automotive DC-DC converter
„ Engine management
„ Motors, lamps and solenoid control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
drain-source
voltage
Conditions
Tj 25 °C; Tj 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 5
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 100 A; Vsup 75 V;
drain-source
RGS = 50 ; VGS = 10 V;
avalanche energy Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 75 V
[1] - - 100 A
- - 306 W
- 3.4 4 m
- - 858 mJ




BUK6E4R0-75C pdf, 반도체, 판매, 대치품
NXP Semiconductors
200
ID
(A)
150
003aac382
100
50
(1)
0
0 50 100 150 200
Tmb (°C)
www.DataSheet4U.com
BUK6E4R0-75C
N-channel TrenchMOS FET
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 3
vertical in free air
Min Typ Max Unit
- - 0.45 K/W
- 50 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2
003aac354
P
tp
δ=
T
single shot
tp
T
t
10-3
10-6
10-5
10-4
10-3
10-2
10-1 tp (s)
1
Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6E4R0-75C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 July 2010
© NXP B.V. 2010. All rights reserved.
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BUK6E4R0-75C 전자부품, 판매, 대치품
NXP Semiconductors
7. Package outline
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
www.DataSheet4U.com
BUK6E4R0-75C
N-channel TrenchMOS FET
SOT226
D1 E
D
b1
L
L1
123
ee
b
A
A1
mounting
base
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b
b1
c
D
max
D1
E
e
L
L1 Q
mm 4.5 1.40 0.85 1.3 0.7
4.1 1.27 0.60 1.0 0.4
11
1.6
1.2
10.3
9.7
2.54
15.0
13.5
3.30
2.79
2.6
2.2
OUTLINE
VERSION
SOT226
IEC
REFERENCES
JEDEC
JEITA
TO-262
EUROPEAN
PROJECTION
Fig 6. Package outline SOT226 (I2PAK)
ISSUE DATE
06-02-14
09-08-25
BUK6E4R0-75C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 July 2010
© NXP B.V. 2010. All rights reserved.
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BUK6E4R0-75C

N-channel TrenchMOS FET

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