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PDF AUIRFSL4310 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFSL4310 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AUIRFSL4310 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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AUTOMOTIVE GRADE
www.DataSheePt4DU.c-o9m6324
AUIRFS4310
AUIRFSL4310
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
HEXFET® Power MOSFET
D V(BR)DSS
100V
RDS(on) typ.
5.6mΩ
G max. 7.0mΩ
ID (Silicon Limited)
130A c
S
ID (Package Limited)
75A
GDS
D2Pak
AUIRFS4310
GDS
TO-262
AUIRFSL4310
GDS
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dV/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally limited)
ÃdAvalanche Current
Repetitive Avalanche Energy
fPeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Max.
130
92
75
550
300
2.0
± 20
980
See Fig. 14, 15, 22a, 22b,
14
-55 to + 175
300 (1.6mm from case)
x x10lb in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
kRθJC Junction-to-Case
jRθJA Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
0.50
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10
1 page  
1000.0
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
140
120 Limited By Package
100
80
60
40
20
0
25 50 75 100 125 150 175
Fig 9. TMCa,xCiamsue mTemDpraeriantuCreu(r°rCe)nt vs.
Case Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20 40 60 80 100
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
120
10000
1000
AUIRFS/SL4310www.DataSheet4U.com
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100 100µsec
10
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
1msec
10msec
DC
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
120
115
110
105
100
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Drain-to-Source Breakdown Voltage
2400
2000
1600
ID
TOP
12A
17A
BOTTOM 75A
1200
800
400
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
5
5 Page 
D2Pak (TO-263AB) Tape & Reel Information
AUIRFS/SL4310www.DataSheet4U.com
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
www.irf.com
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet AUIRFSL4310.PDF ] | |
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