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PDF BYD33KZ Data sheet ( Hoja de datos )

Número de pieza BYD33KZ
Descripción FAST RECOVERY RECTIFIERS
Fabricantes Galaxy Semi-Conductor Holdings Limited 
Logotipo Galaxy Semi-Conductor Holdings Limited Logotipo



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No Preview Available ! BYD33KZ Hoja de datos, Descripción, Manual

BL GALAXY ELECTRICAL
FAST RECOVERY RECTIFIERS
BYD33D(Z)---BYD33M(Z)
VOLTAGE RANGE: 200 --- 1000 V
CURRENT: 1.3 A
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Is opropanol and
s im ilar s olvents
MECHANICAL DATA
Cas e:JEDEC DO--15,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014ounces ,0.39 gram s
Mounting pos ition: Any
DO - 15
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
V R MS
VDC
Maximum average forw ard rectif ied current
9.5mm lead length,
@TA=75
Peak forw ard surge current
IF (AV)
10ms single half-sine-w ave
IF SM
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
( @ 1.0A
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
IR
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance (Note2)
CJ
Typical thermal resistance
(Note3)
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
BYD
33D
200
140
200
BYD
33G
400
280
200
BYD
33J
600
420
600
1.3
BYD
33K
800
560
800
BYD
33M
1000
700
1000
UNITS
V
V
V
A
20.0
1.3
1.0
100.0
250
20
120
-55 ---- + 150
- 55 ---- + 150
A
V
A
300 ns
pF
K/W
www.galaxycn.com
Document Number 0261040
BLGALAXY ELECTRICAL
1.

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