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부품번호 | IRF1010EZLPbF 기능 |
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기능 | AUTOMOTIVE MOSFET | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 12 페이지수
www.DataSheet4U.com
PD - 95483
IRF1010EZPbF
AUTOMOTIVE MOSFET IRF1010EZSPbF
Features
O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free
G
IRF1010EZLPbF
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 8.5mΩ
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
TO-220AB
IRF1010EZ
ID = 75A
S
D2Pak
IRF1010EZS
TO-262
IRF1010EZL
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
Max.
84
60
75
340
140
Units
A
W
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
0.90
± 20
99
180
See Fig.12a,12b,15,16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
10 lbf•in (1.1N•m)
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
jJunction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
1.11
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
06/29/04
IRF1010EZ/S/LPbF
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100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
100
1
Ciss
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
12.0
10.0
ID= 51A
8.0
VDS= 48V
VDS= 30V
VDS= 12V
6.0
4.0
2.0
0.0
0
10 20 30 40 50
QG Total Gate Charge (nC)
60
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
10.00 TJ = 175°C
1.00
TJ = 25°C
VGS = 0V
0.10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100 100µsec
1msec
10
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10msec
10
VDS, Drain-to-Source Voltage (V)
100
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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IRF1010EZ/S/LPbF
1000
100
10
1
Duty Cycle = Single Pulse
0.01
0.05
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 15. Typical Avalanche Current vs.Pulsewidth
1.0E-01
100
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 51A
75
50
25
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
7
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부품번호 | 상세설명 및 기능 | 제조사 |
IRF1010EZLPbF | AUTOMOTIVE MOSFET | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |