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IHW25N120R2 데이터시트 PDF




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부품번호 IHW25N120R2 기능
기능 Reverse Conducting IGBT
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IHW25N120R2 데이터시트, 핀배열, 회로
Soft Switching Series
IHW25N120R2www.DataSheet4U.com
Reverse Conducting IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
C
G
E
PG-TO-247-3-21
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IHW25N120R2
Maximum Ratings
1200V
25A
1.6V
175°C H25R1202 PG-TO-247-3-21
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1200V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 10 µs, D < 0.01)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
1200
50
25
75
75
50
25
75
50
130
120
±20
±25
365
-40...+175
-55...+175
260
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2 Feb. 07




IHW25N120R2 pdf, 반도체, 판매, 대치품
Soft Switching Series
IHW25N120R2www.DataSheet4U.com
60A TC=80°C
TC=110°C
40A
Ic
20A
0A
10Hz
100Hz
1kHz
10kHz 100kHz
Figure 1.
f, SWITCHING FREQUENCY
Collector current as a function of
switching frequency for hard
switching (turn-off)
(Tj 175°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 10)
tp=1µs
10µs
20µs
10A
50µs
1A 500µs
5ms
DC
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. IGBT Safe operating area
(D = 0, TC = 25°C,
Tj 175°C;VGE=15V)
350W
300W
250W
200W
150W
100W
50W
0W
25°C 50°C 75°C 100°C 125°C 150°C
50A
40A
30A
20A
10A
0A
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175°C)
Figure 4.
TC, CASE TEMPERATURE
DC Collector current as a function
of case temperature
(VGE 15V, Tj 175°C)
Power Semiconductors
4
Rev. 2 Feb. 07

4페이지










IHW25N120R2 전자부품, 판매, 대치품
Soft Switching Series
IHW25N120R2www.DataSheet4U.com
6.0mJ
4.0mJ
Eoff
5.0mJ
4.0mJ
3.0mJ
Eoff 3.0mJ
2.0mJ
2.0mJ
1.0mJ
0.0mJ
0A 10A 20A 30A 40A 50A 60A 70A
IC, COLLECTOR CURRENT
Figure 13. Typical turn-off energy as a
function of collector current
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=10,
Dynamic test circuit in Figure E)
1.0mJ
0.0mJ
10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω
RG, GATE RESISTOR
Figure 14. Typical turn-off energy as a
function of gate resistor
(inductive load, TJ=175°C, VCE=600V,
VGE=0/15V, IC=25A,
Dynamic test circuit in Figure E)
2.5mJ
Eoff
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical turn-off energy as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=25A, RG=10,
Dynamic test circuit in Figure E)
2.5mJ
Eoff
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
600V
650V
700V
750V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical turn-off energy as a
function of collector emitter
voltage
(inductive load, TJ=175°C,
VGE=0/15V, IC=20A, RG=10,
Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2 Feb. 07

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IHW25N120R2

Reverse Conducting IGBT

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