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Datasheet IXDF502 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IXDF502 | (IXDx502) 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
IXDF502 / IXDI502 / IXDN502
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
Features
• Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 2 Amps • High 2A Peak Output Current • Wide Operating Range: 4.5V to 30V • |  IXYS | mosfet |
IXD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IXD604 | 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION
Features
• 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature
Range • Logic Input Withstands Negative Swing of up to 5V • Outputs May be Connected in Parallel for Higher
Drive Current IXYS mosfet | | |
| 2 | IXD604 | 4-Ampere Dual Low-Side Ultrafast MOSFET Drivers Features
• 4A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -55°C to +125°C Extended Operating Temperature
Range • Logic Input Withstands Negative Swing of up to 5V • Matched Rise and Fall Times • Low Propogation Delay Time: 19ns • Low, 10μA Supply Cur  Clare mosfet | | |
| 3 | IXD611 | High & Low-side Driver IXD611
IXD611
600V, 600 mA High & Low-side Driver for N-Channel MOSFETs and IGBTs
Features
• Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage IXYS driver | | |
| 4 | IXD75IF650NA | XPT IGBT XPT IGBT
Trench IGBT (medium speed) Copack
Part number
IXD75IF650NA
IXD75IF650NA
VCES I C25 VCE(sat)
= = =
tentative
650 V 75 A 1.5 V
(G) 1
2 (C) 3 (E)
Features / Advantages:
● Easy paralleling due to the positive temperature coefficient of the on-state voltage
● Rugged XPT design (Xtreme IXYS igbt | | |
| 5 | IXDA20N120AS | High Voltage IGBT High Voltage IGBT
IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE(sat) typ = 2.8 V
Short Circuit SOA Capability Square RBSOA
C
TO-263 AB
G E C (TAB)
Preliminary Data
G
E
E = Emitter, G = Gate , C (TAB) = Collector
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ
Conditions TJ =  IXYS Corporation igbt | | |
| 6 | IXDD404 | 4 Amp Dual Low-Side Ultrafast MOSFET Driver IXDD404
4 Amp Dual Low-Side Ultrafast MOSFET Driver
Features
• Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 35V • Ability to Disable Output under Faults • High Cap IXYS Corporation mosfet | | |
| 7 | IXDD404PI | 4 Amp Dual Low-Side Ultrafast MOSFET Driver PRELIMINARY DATA SHEET IXDD404PI / 404SI / 404SIA / 404SI-16
4 Amp Dual Low-Side Ultrafast MOSFET Driver
Features
• Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 4A Peak • Wide Operating Range: 4.5V to 25V � IXYS Corporation mosfet | |
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