PDF 2SJ683 Data sheet ( Hoja de datos )

Número de pieza	2SJ683
Descripción	P-Channel Silicon MOSFET General-Purpose Switching Device Applications
Fabricantes	Sanyo Semicon Device
Logotipo
Hay una vista previa y un enlace de descarga de 2SJ683 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas
No Preview Available ! Ordering number : ENA1057 2SJ683 www.DataSheet4U.com SANYO Semiconductors DATA SHEET 2SJ683 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Load S/W Applicaions. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) 1 Avalanche Current 2 Note : 1 VDD=--30V, L=100μH, IAV=--65A 2 L≤100μH, Single pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Electrical Characteristics at Ta=25°C Conditions PW≤10μs, duty cycle≤1% Tc=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Marking : J683 Symbol Conditions V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS= ±16V, VDS=0V Ratings --60 ±20 --65 --260 50 150 --55 to +150 400 --65 Unit V V A A W °C °C mJ A min --60 Ratings typ max Unit V --1 μA ±10 μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30508QA TI IM TC-00001244 No. A1057-1/4 1 page

Páginas	Total 4 Páginas
PDF Descargar	[ Datasheet 2SJ683.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
2SJ680	Field Effect Transistor / Silicon P-Channel MOS Type	Toshiba
2SJ681	Relay Driver DC-DC Converter	Toshiba
2SJ6812	NPN Triple Diffused Planar Silicon Transistor	Fairchild Semiconductor
2SJ683	P-Channel Silicon MOSFET General-Purpose Switching Device Applications	Sanyo Semicon Device

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar