KC818 Datasheet PDF - Guangdong Kexin Industrial
| Part Number | KC818 | |
| Description | NPN Silicon AF Transistors | |
| Manufacturers | Guangdong Kexin Industrial | |
| Logo |  |
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SMD Type
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Transistors
NPN Silicon AF Transistors
KC818(BC818)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
Rating
30
25
5
800
310
150
-65 to +150
Unit
V
V
V
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base emitter on voltage
Output Capacitance
Transition frequency
* Pulsed: PW 350 ìs, duty cycle
2%
Symbol
Testconditons
VCBO IC = 10 A,VBE = 0
VCEO IC = 10 mA, IB = 0
VEBO IE = 10 A, IC = 0
ICES VCB =25 V, VBE= 0
IEBO VEB =4 V, IC = 0
IC =100 mA, VCE =1 V
hFE
IC =300 mA, VCE =1 V
VCE(sat) IC =500 mA, IB = 50 mA
VBE(on) VCE=1V,IC=300mA
Cob VCB=10V,f=1MHz
fT IC = 10 mA, VCE =5 V, f = 50 MHz
Min Typ Max Unit
30 V
25 V
5V
100 nA
100 nA
100 630
60
0.7 V
1.2 V
12 pF
100 MHz
Marking
NO.
Marking
hFE
KC818-16
8GA
100 250
KC818-25
8GB
160 400
KC818-40
8GC
250 630
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for KC818 electronic component. |
| Information | Total 1 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ KC818.PDF Datasheet ] | |
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