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PDF KC818A Data sheet ( Hoja de datos )
| Número de pieza | KC818A | |
| Descripción | NPN Silicon AF Transistors | |
| Fabricantes | Guangdong Kexin Industrial | |
| Logotipo |  |
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Transistors
NPN Silicon AF Transistors
KC818A(BC818A)
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Base current
power dissipation
Storage temperature
Junction temperature
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
PD
Tstg
Tj
Rating
30
25
5
500
1
100
310
-65 to +150
150
Unit
V
V
V
mA
A
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base to emitter voltage *
Collector-base capacitance
Emitter-base capacitance
Transition frequency
* Pulsed: PW 350 ìs, duty cycle
KC818A-16
KC818A-25
KC818A-40
2%
Symbol
Testconditons
VCBO IC = 10 A, IE = 0
VCEO IC = 10 mA, IB = 0
VEBO
ICBO
IE = 10 A, IC = 0
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150
IEBO VEB = 4 V, IC = 0
hFE IC = 100 mA, VCE = -1 V
VCE(sat) IC = 500 mA, IB = 50 mA
VBE(sat) IC = 500 mA, IB = 50 mA
CCb VCB = 10 V, f = 1 MHz
Ceb VEB = 0.5 V, f = 1 MHz
fT IC = 50 mA, VCE = 5 V, f = 100 MHz
Marking
NO.
Marking
KC818A-16
6E
KC818A-25
6F
KC818A-40
6G
Min Typ Max Unit
30 V
25 V
5V
100 nA
50 A
100 nA
100 160 250
160 250 400
250 350 630
0.7 V
1.2 V
6 pF
60 pF
170 MHz
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet KC818A.PDF ] | |
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