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부품번호 | STP13NK60ZFP 기능 |
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기능 | N-channel Power MOSFET | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 17 페이지수
STB13NK60Z - STB13NK60Z-1
STP13NK60Z/FP - STW13NK60Z
N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247
Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
STB13NK60Z-1
STB13NK60Z
STP13NK60ZFP
STP13NK60Z
STW13NK60Z
600 V
600 V
600 V
600 V
600 V
<0.55 Ω
<0.55 Ω
<0.55 Ω
<0.55 Ω
<0.55 Ω
ID
13 A
13 A
13 A
13 A
13 A
Pw
150 W
150 W
35 W
150 W
150 W
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES
■ DC-AC CONVERTERS FOR WELDING, UPS
AND MOTOR DRIVE
Order codes
Package
3
2
1
TO-220
3
2
1
TO-220FP
123
I²PAK
3
2
1
TO-247
3
1
D²PAK
Internal schematic diagram
Sales Type
STB13NK60Z-1
STB13NK60ZT4
STP13NK60ZFP
STP13NK60Z
STW13NK60Z
September 2005
Marking
B13NK60Z-1
B13NK60Z
P13NK60ZFP
P13NK60Z
W13NK60Z
Package
I²PAK
D²PAK
TO-220FP
TO-220
TO-247
Packaging
TUBE
TAPE & REEL
TUBE
TUBE
TUBE
Rev 2
1/17
www.st.com
17
2 Electrical characteristics STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z
Table 7. Gate-source zener diode
Symbol
Parameter
BVGSO
Note 6
Gate-Source Breakdown
Voltage
Test Conditions
Igs=±1mA
(Open Drain)
Min.
30
Table 8. Source drain diode
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDMNote 2 Source-drain Current (pulsed)
VSDNote 4 Forward on Voltage
ISD = 10 A, VGS=0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD= 10A, di/dt = 100A/µs,
VDD=35 V, Tj=150°C
Min.
Typ.
Max. Unit
V
Typ.
570
4.5
16
Max.
10
40
1.6
Unit
A
A
V
ns
µC
A
(1) Limited only by maximum temperature allowed
(2) Pulse width limited by safe operating area
(3) ISD ≤13A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80%
(6) The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,
but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In
this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
(7) When mounted on minimum Footprint
4/17
4페이지 STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z 2 Electrical characteristics
Figure 13. Normalized Gate Threshold Voltage Figure 14. Normalized on Resistance vs
vs Temperatute
Temperature
Figure 15. Source-drain Diode Forward
Characteristics
Figure 16. Normalized BVDSS vs Temperature
Figure 17. Maximum Avalanche Energy vs
Temperature
7/17
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구 성 | 총 17 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
STP13NK60ZFP | N-channel Power MOSFET | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |