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부품번호 NJW1302G 기능
기능 (NJW1302G / NJW3281G) Complementary NPN-PNP Silicon Power Bipolar Transistors
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NJW1302G 데이터시트, 핀배열, 회로
NJW3281G (NPN)
NJW1302G (PNP)
Preferred Devices
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The NJW3281G and NJW1302G are power transistors for high
power audio, disk head positioners and other linear applications.
Features
ăExceptional Safe Operating Area
ăNPN/PNP Gain Matching within 10% from 50 mA to 5 A
ăExcellent Gain Linearity
ăHigh BVCEO
ăHigh Frequency
ăThese are Pb-Free Devices
Benefits
ăReliable Performance at Higher Powers
ăSymmetrical Characteristics in Complementary Configurations
ăAccurate Reproduction of Input Signal
ăGreater Dynamic Range
ăHigh Amplifier Bandwith
Applications
ăHigh-End Consumer Audio Products
ăHome Amplifiers
ăHome Receivers
ăProfessional Audio Amplifiers
ăTheater and Stadium Sound Systems
ăPublic Address Systems (PAs)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage - 1.5 V
Collector Current - Continuous
Collector Current - Peak (Note 1)
VCEO
VCBO
VEBO
VCEX
IC
250 Vdc
250 Vdc
5.0 Vdc
250 Vdc
15 Adc
30
Base Current - Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
IB 1.6 Adc
PD 200 W
1.43 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg -ā 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
RqJC
0.625 °C/W
Thermal Resistance, Junction-to-Ambient RqJA
40 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
©Ă Semiconductor Components Industries, LLC, 2008
January, 2008 - Rev. 0
1
www.DataSheet4U.com
http://onsemi.com
15 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS 200 WATTS
MARKING
DIAGRAM
NJWxxxG
AYWW
TO-3P
CASE 340AB
STYLES 1,2,3
xxxx
G
A
Y
WW
= 0281 or 0302
= Pb-Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
NJW3281G
NJW1302G
Package
TO-3P
(Pb-Free)
TO-3P
(Pb-Free)
Shipping
30 Units/Rail
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NJW3281/D




NJW1302G pdf, 반도체, 판매, 대치품
NJW3281G (NPN) NJW1302G (PNP)
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
PNP NJW1302G
1
NPN NJW3281G
1
5A
5A
3A
1A
1A
0.1
0.1 0.5 A
3A
IC = 0.1 A
0.5 A
IC = 0.1 A
0.01
0.001
0.01
TJ = 25°C
0.01
0.1 1 0.001
IB, BASE CURRENT (A)
Figure 7. Saturation Region
TJ = 25°C
0.01 0.1
IB, BASE CURRENT (A)
Figure 8. Saturation Region
1
1
IC/IB = 10
1
IC/IB = 10
0.1 25°C
0.1
25°C
125°C
-30°C
0.01
0.01
0.1
1
10 100
IC, COLLECTER CURRENT (A)
Figure 9. VCE(sat), Collector-Emitter Saturation
Voltage
0.01
0.01
-30°C
125°C
0.1 1
10
IC, COLLECTER CURRENT (A)
Figure 10. VCE(sat), Collector-Emitter
Saturation Voltage
100
1.6
VCE = 5 V
1.4
1.2
1.0
0.8 -30°C
0.6 25°C
0.4 125°C
0.2
0.0
0.01
0.1
1
10
IC, COLLECTER CURRENT (A)
Figure 11. VBE(on), Base-Emitter Voltage
100
1.6
VCE = 5 V
1.4
1.2
1.0
0.8 -30°C
0.6
25°C
0.4
125°C
0.2
0.0
0.01
0.1
1
10 100
IC, COLLECTER CURRENT (A)
Figure 12. VBE(on), Base-Emitter Voltage
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NJW1302G 전자부품, 판매, 대치품
NJW3281G (NPN) NJW1302G (PNP)
PACKAGE DIMENSIONS
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BB
C
Q
4
AL
(3°)
PK
123
G
3X D
0.25 M A B S
G
TO-3P-3LD
CASE 340AB-01
ISSUE A
A
SEATING
PLANE
E
HF
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
U 2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 19.70 19.90 20.10
B 15.40 15.60 15.80
C 4.60 4.80 5.00
D 0.80 1.00 1.20
E 1.45 1.50 1.65
F 1.80 2.00 2.20
G 5.45 BSC
H 1.20 1.40 1.60
J 0.55 0.60 0.75
K 19.80 20.00 20.20
L 18.50 18.70 18.90
P 3.30 3.50 3.70
W Q 3.10 3.20 3.50
U 5.00 REF
W 2.80 3.00 3.20
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
PowerBase is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
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NJW3281/D

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NJW1302G

(NJW1302G / NJW3281G) Complementary NPN-PNP Silicon Power Bipolar Transistors

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