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PDF K2414 Data sheet ( Hoja de datos )
| Número de pieza | K2414 | |
| Descripción | MOSFET ( Transistor ) - 2SK2414 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTORwww.DataSheet4U.com
2SK2414, 2SK2414-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2414 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
• Low Ciss Ciss = 840 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID(DC)
±10 A
Drain Current (pulse)*
ID(pulse)
±40 A
Total Power Dissipation (Tc = 25 ˚C) PT1
20 W
Total Power Dissipation (TA = 25 ˚C) PT2
1.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
Single Avalanche Current** IAS 10 A
Single Avalanche Energy**
EAS 10 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeter)
6.5 ±0.2
5.0 ±0.2
4
2.3 ±0.2
0.5 ±0.1
1 23
1.3 MAX.
0.6 ±0.1
2.3 2.3
0.6 ±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-3
6.5 ±0.2
5.0 ±0.2
4
2.3 ±0.2
0.5 ±0.1
12 3
1.3 MAX.
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-3Z (SURFACE MOUNT TYPE)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. D13193EJ2V0DS00 (2nd edition)
(Previous No. TC-2495)
Date Published March 1998 N CP(K)
Printed in Japan
©
1994
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
120
100
VGS = 4 V
80
60
VGS = 10 V
40
20
0
–50 –25 0
ID = 5 A
25 50 75 100 125 150
Tch - Channel Temperature - °C
2SK2414, 2SK2414-Z
www.DataSheet4U.com
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
10
VGS = 0
1
0.1
0
Pulsed
1.0 2.0
VSD - Source to Drain Voltage - V
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
10
1 10 100
VDS - Drain to Source Voltage - V
1000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
td (off)
tf
tr
td (on)
VDD = 30 V
VGS = 10 V
RG = 10 Ω
1.0 10 100
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
50
10
0.1
di/dt = 50 A/ µ s
VGS = 0
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 ID = 10 A 16
VDD = 48 V 14
60 12
VDS
40
10
VGS 8
6
20 4
2
0
0 10 20 30 40
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2414.PDF ] | |
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