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Número de pieza | W14NC50 | |
Descripción | STW14NC50 | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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STW14NC50
N-CHANNEL 500V - 0.31Ω - 14A TO-247
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STW14NC50
500V
< 0.38Ω
14 A
s TYPICAL RDS(on) = 0.31Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s HIGH CURRENT, HIGH SPEED SWITCHING
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Value
Unit
500 V
500 V
±30 V
14 A
8.7 A
56 A
190 W
1.5 W/°C
3.5 V/ns
–65 to 150
°C
150 °C
(1)ISD ≤14A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
May 2001
1/8
1 page www.DataSheet4U.com
STW14NC50
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet W14NC50.PDF ] |
Número de pieza | Descripción | Fabricantes |
W14NC50 | STW14NC50 | STMicroelectronics |
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