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PDF W14NC50 Data sheet ( Hoja de datos )

Número de pieza W14NC50
Descripción STW14NC50
Fabricantes STMicroelectronics 
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No Preview Available ! W14NC50 Hoja de datos, Descripción, Manual

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STW14NC50
N-CHANNEL 500V - 0.31- 14A TO-247
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STW14NC50
500V
< 0.38
14 A
s TYPICAL RDS(on) = 0.31
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s HIGH CURRENT, HIGH SPEED SWITCHING
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Value
Unit
500 V
500 V
±30 V
14 A
8.7 A
56 A
190 W
1.5 W/°C
3.5 V/ns
–65 to 150
°C
150 °C
(1)ISD 14A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
May 2001
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W14NC50 pdf
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STW14NC50
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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