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PDF LP6836P100-1 Data sheet ( Hoja de datos )
| Número de pieza | LP6836P100-1 | |
| Descripción | Packaged 0.25W Power PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
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Filtronic
Solid State
FEATURES
• +24.5 dBm Typical Power at 15 GHz
• 12 dB Typical Power Gain at 15 GHz
• Low Intermodulation Distortion
• 55% Power-Added-Efficiency
• Color-coded by IDSS range
LP6836P100
Packaged 0.25W Power PHEMT
GATE
SOURCE
DRAIN
DESCRIPTION AND APPLICATIONS
The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic
High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier
gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP6836 also features Si3N4
passivation and is available in die form, or P70 packages. Packages are color-coded by IDSS range.
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, and medium-haul digital radio transmitters.
The LP6836P100 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade. Space level screening to FSS JANS grade is also available.
PERFORMANCE SPECIFICATIONS (TA = 25°C)
SYMBOLS PARAMETERS
IDSS
P1dB
G1dB
ηADD
IMAX
Saturated Drain-Source Current
LP6836-P100-1 Blue
VDS = 2V VGS = 0V
LP6836-P100-2 Green
LP6836-P100-3 Red
Output Power at 1dB Gain Compression
VDS = 8.0V, IDS = 50% IDSS
f = 15 GHz
Power Gain at 1dB Gain Compression
VDS = 8.0V, IDS = 50% IDSS
f = 15 GHz
Power-Added Efficiency
Maximum Drain-Source Current
VDS = 2V VGS = +1V
GM Transconductance
VDS = 2V VGS = 0V
VP Pinch-Off Voltage
VDS = 2V IDS = 2mA
IGSO Gate-Source Leakage Current
VGS = -5V
BVGS
Gate-Source Breakdown Voltage
IGS = 2mA
BVGD
Gate-Drain Breakdown Voltage
IGD = 2mA
MIN TYP MAX UNITS
80 90 95 mA
96 100 105
106 115 125
23.5 24.5
dBm
8.5 9.5
55
190
70 95
-0.25 -0.8 -1.5
1 15
-11 -15
-12 -16
dB
%
mA
mS
V
µA
V
V
Get Package Model
Phone: (408) 988-1845
DSS-031 WF
Internet: http://www.filtronicsolidstate.com
Fax: (408) 970-9950
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet LP6836P100-1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LP6836P100-1 | Packaged 0.25W Power PHEMT | Filtronic Compound Semiconductors |
| LP6836P100-1 | Packaged 0.25W Power PHEMT | Filtronic Compound Semiconductors |
| LP6836P100-2 | Packaged 0.25W Power PHEMT | Filtronic Compound Semiconductors |
| LP6836P100-2 | Packaged 0.25W Power PHEMT | Filtronic Compound Semiconductors |
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