PDF EDS2532AABH-6B Data sheet ( Hoja de datos )

Número de pieza	EDS2532AABH-6B
Descripción	256M bits SDRAM
Fabricantes	Elpida Memory
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No Preview Available ! DATA SHEET www.DataSheet4U.com 256M bits SDRAM EDS2532AABH-6B (8M words × 32 bits) Description The EDS2532AABH is a 256M bits SDRAM organized as 2,097,152 words × 32 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. It is packaged in 90-ball FBGA. Features • 3.3V power supply • Clock frequency: 166MHz (max.) • Single pulsed /RAS • ×32 organization • 4 banks can operate simultaneously and independently • Burst read/write operation and burst read/single write operation capability • Programmable burst length (BL): 1, 2, 4, 8 and full page • 2 variations of burst sequence  Sequential (BL = 1, 2, 4, 8, full page)  Interleave (BL = 1, 2, 4, 8) • Programmable /CAS latency (CL): 2, 3 • Byte control by DQM • Address  4K Row address /512 column address • Refresh cycles  4096 refresh cycles/64ms • 2 variations of refresh  Auto refresh  Self refresh • FBGA package with lead free solder (Sn-Ag-Cu) Pin Configurations /xxx indicate active low signal. 90-ball FBGA 123456789 A DQ26 DQ24 VSS B DQ28 VDDQ VSSQ C VSSQ DQ27 DQ25 D VSSQ DQ29 DQ30 E VDDQ DQ31 NC F VSS DQM3 A3 G A4 A5 A6 H A7 A8 NC J CLK CKE A9 K DQM1 NC NC L VDDQ DQ8 VSS M VSSQ DQ10 DQ9 N VSSQ DQ12 DQ14 P DQ11 VDDQ VSSQ R DQ13 DQ15 VSS (Top view) VDD DQ23 DQ21 VDDQ VSSQ DQ19 DQ22 DQ20 VDDQ DQ17 DQ18 VDDQ NC DQ16 VSSQ A2 DQM2 VDD A10 A0 A1 NC BA1 A11 BA0 /CS /RAS /CAS /WE DQM0 VDD DQ7 VSSQ DQ6 DQ5 VDDQ DQ1 DQ3 VDDQ VDDQ VSSQ DQ4 VDD DQ0 DQ2 A0 to A11 BA0, BA1 DQ0 to DQ31 /CS /RAS /CAS /WE DQM0 to DQM3 CKE CLK VDD VSS VDDQ VSSQ NC Address inputs Bank select address Data-input/output Chip select Row address strobe Column address strobe Write enable DQ mask enable Clock enable Clock input Power for internal circuit Ground for internal circuit Power for DQ circuit Ground for DQ circuit No connection Document No. E0494E40 (Ver. 4.0) Date Published February 2005 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2004-2005 1 page EDS2532AABH-6B www.DataSheet4U.com DC Characteristics 1 (TA = 0 to +70°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V) Parameter /CAS latency Operating current Symbol IDD1 Standby current in power down IDD2P Standby current in power down (input signal stable) IDD2PS Standby current in non power down IDD2N Standby current in non power down (input signal stable) IDD2NS Active standby current in power down IDD3P Active standby current in power down (input signal stable) IDD3PS Active standby current in non power down IDD3N Active standby current in non power down (input signal stable) IDD3NS Burst operating current IDD4 Grade max. 135 3 2 20 9 4 3 50 40 180 Unit Test condition mA Burst length = 1 tRC = tRC (min.) mA CKE = VIL, tCK = tCK (min.) mA CKE = VIL, tCK = ∞ mA CKE, /CS = VIH, tCK = tCK (min.) mA CKE = VIH, tCK = ∞, /CS = VIH mA CKE = VIL, tCK = tCK (min.) mA CKE = VIL, tCK = ∞ mA CKE, /CS = VIH, tCK = tCK (min.) mA CKE = VIH, tCK = ∞, /CS = VIH mA tCK = tCK (min.), BL = 4 Notes 1, 2, 3 6 7 4 8 1, 2, 6 2, 7 1, 2, 4 2, 8 1, 2, 5 Refresh current IDD5 300 mA tRC = tRC (min.) 3 Self refresh current IDD6 3 mA VIH ≥ VDD – 0.2V VIL ≤ 0.2V Self refresh current (L-version) IDD6 -XXL 1 mA VIH ≥ VDD – 0.2V VIL ≤ 0.2V Notes: 1. IDD depends on output load condition when the device is selected. IDD (max.) is specified at the output open condition. 2. One bank operation. 3. Input signals are changed once per one clock. 4. Input signals are changed once per two clocks. 5. Input signals are changed once per four clocks. 6. After power down mode, CLK operating current. 7. After power down mode, no CLK operating current. 8. Input signals are VIH or VIL fixed. Data Sheet E0494E40 (Ver. 4.0) 5 5 Page EDS2532AABH-6B www.DataSheet4U.com Command Operation Command Truth Table The SDRAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins. CKE Function Symbol n – 1 n /CS /RAS /CAS /WE BA1,BA0 A10 Device deselect DESL H × H × × × × No operation NOP H × L H H H× Burst stop BST H × L H H L × Read READ H × L H L HV Read with auto precharge READA H × L H L H V Write WRIT H × L H L L V Write with auto precharge WRITA H × L H L L V Bank activate ACT H × L L H HV Precharge select bank PRE H × L L H L V Precharge all banks PALL H × L L H L × Mode register set MRS H × L L L L L Remark: H: VIH. L: VIL. ×: VIH or VIL. V: Valid address input. × × × L H L H V L H L A0 to A11 × × × V V V V V × × V Device deselect command [DESL] When this command is set (/CS is High), the SDRAM ignore command input at the clock. However, the internal status is held. No operation [NOP] This command is not an execution command. However, the internal operations continue. Burst stop command [BST] This command can stop the current burst operation. Column address strobe and read command [READ] This command starts a read operation. In addition, the start address of burst read is determined by the column address (see Address Pins Table in Pin Function) and the bank select address (BA0, BA1). After the read operation, the output buffer becomes High-Z. Read with auto-precharge [READA] This command automatically performs a precharge operation after a burst read with a burst length of 1, 2, 4 or 8. Column address strobe and write command [WRIT] This command starts a write operation. When the burst write mode is selected, the column address (see Address Pins Table in Pin Function) and the bank select address (BA0, BA1) become the burst write start address. When the single write mode is selected, data is only written to the location specified by the column address (see Address Pins Table in Pin Function) and the bank select address (BA0, BA1). Write with auto-precharge [WRITA] This command automatically performs a precharge operation after a burst write with a length of 1, 2, 4 or 8, or after a single write operation. Data Sheet E0494E40 (Ver. 4.0) 11 11 Page

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