|
|
Número de pieza | LP6836SOT343 | |
Descripción | PACKAGED MEDIUM POWER PHEMT | |
Fabricantes | Filtronic Compound Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LP6836SOT343 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! PRELIMINARY DATA SHEET LP6836SOT343
PACKAGED MEDIUM POWER PHEMT
• FEATURES
♦ 0.5 dB Noise Figure at 2 GHz
♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz
♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz
♦ 70% Power-Added-Efficiency
• DESCRIPTION AND APPLICATIONS
The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic
range. It utilizes a 0.25 µm x 360 µm Schottky barrier gate, defined by electron-beam
photolithography. The LP6836’s active areas are passivated with Si3N4, and the SOT343 (also
known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-
mount package.
The LP6836SOT343 is designed for commercial systems for use in low noise amplifiers and
oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it
appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for
WLAN and ISM band spread spectrum applications.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB
Compression
Power-Added Efficiency
Symbol
IDSS
P-1dB
G-1dB
PAE
Noise Figure
NF
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
GM
IGSO
VP
|VBDGS|
|VBDGD|
Test Conditions
VDS = 2 V; VGS = 0 V
f=2GHz; VDS = 3 V; IDS = 50% IDSS
f=2GHz; VDS = 3 V; IDS = 50% IDSS
f=2GHz; VDS = 3 V; IDS = 50% IDSS;
POUT = 19.5 dBm
f=2GHz; VDS = 3V; IDS = 25% IDSS
f=2GHz; VDS = 3V; IDS = 50% IDSS
VDS = 2 V; VGS = 0 V
VGS = -5 V
VDS = 2 V; IDS = 2 mA
IGS = 2 mA
IGD = 2 mA
Min Typ Max Units
80 125 mA
18 19
dBm
18 20
dB
70 %
0.5
0.7
75 100
1 10
-0.25
-2.0
11 15
dB
dB
mS
µA
V
V
12 16
V
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/20/01
Email: [email protected]
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet LP6836SOT343.PDF ] |
Número de pieza | Descripción | Fabricantes |
LP6836SOT343 | PACKAGED MEDIUM POWER PHEMT | Filtronic Compound Semiconductors |
LP6836SOT343 | PACKAGED MEDIUM POWER PHEMT | Filtronic Compound Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |