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TP3N120 PDF 데이터시트 ( Data , Function )

부품번호 TP3N120 기능
기능 ICTP3N120
제조업체 IXYS Corporation
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TP3N120 데이터시트, 핀배열, 회로
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
IXTA 3N120
IXTP 3N120
www.DataSheet4U.com
VDSS
I RD25 DS(on)
1200 V 3 A 4.5
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
1200
V
1200
V
±20 V
±30 V
3A
12 A
3A
20 mJ
700 mJ
5 V/ns
200 W
-55 to +150
150
-55 to +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
4g
2g
TO-220 (IXTP)
GDS
TO-263 (IXTA)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Low RDS (on)
z Rated for unclamped Inductive load
Switching (UIS)
z Molding epoxies meet UL 94 V-0
flammability classification
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1200
2.5
V
4.5 V
±100 nA
TJ = 25°C
TJ = 125°C
25 µA
1 mA
4.5
Advantages
z Easy to mount
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS98844D(05/03)




TP3N120 pdf, 반도체, 판매, 대치품
Fig. 7. Input Admittance
6
5
4
3
2 TJ = 120º C
25º C
1 -40º C
0
3.5 4 4.5 5 5.5 6
VGS - Volts
6.5
IXTA 3N120www.DataSheet4U.com
IXTP 3N120
Fig. 8. Transconductance
8
7
6 TJ = -40º C
25º C
5 125º C
4
3
2
1
0
0 1.5 3 4.5 6
I D - Amperes
7.5
9
Fig. 9. Source Current vs. Source-To-Drain
Voltage
9
8
7
6
5
4
3 TJ = 125º C
2
1
0
0.4
TJ = 25º C
0.5 0.6 0.7 0.8 0.9
VSD - Volts
Fig. 10. Gate Charge
10
VDS = 600V
8
I D= 1.5A
I G= 10mA
6
4
2
0
0 8 16 24 32 40 48
Q G - nanoCoulombs
10000
1000
Fig. 11. Capacitance
f = 1M Hz
Ciss
Coss
100
10
0
Crss
5 10 15 20 25 30 35 40
VDS - Volts
Fig. 12. Maximum Transient Thermal
Resistance
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1 10 100 1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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부품번호상세설명 및 기능제조사
TP3N120

ICTP3N120

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IXYS Corporation

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