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PDF TP3N120 Data sheet ( Hoja de datos )
| Número de pieza | TP3N120 | |
| Descripción | ICTP3N120 | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TP3N120 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
IXTA 3N120
IXTP 3N120
www.DataSheet4U.com
VDSS
I RD25 DS(on)
1200 V 3 A 4.5 Ω
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
1200
V
1200
V
±20 V
±30 V
3A
12 A
3A
20 mJ
700 mJ
5 V/ns
200 W
-55 to +150
150
-55 to +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
4g
2g
TO-220 (IXTP)
GDS
TO-263 (IXTA)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Low RDS (on)
z Rated for unclamped Inductive load
Switching (UIS)
z Molding epoxies meet UL 94 V-0
flammability classification
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1200
2.5
V
4.5 V
±100 nA
TJ = 25°C
TJ = 125°C
25 µA
1 mA
4.5 Ω
Advantages
z Easy to mount
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS98844D(05/03)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TP3N120.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| TP3N120 | ICTP3N120 | IXYS Corporation |
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