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Número de pieza | RJP6085DPN | |
Descripción | Silicon N Channel IGBT High Speed Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJP6085DPN (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! RJP6085DPN
Silicon N Channel IGBT
High Speed Power Switching
Features
• High speed switching
• Low collector to emitter saturation voltage
Outline
RENESAS Package code: PRSS0004AC-A)
(Package name: TO-220AB)
4
C
www.DataSheet4U.com
REJ03G1863-0100
Rev.1.00
Nov 09, 2009
123
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25°C
Symbol
VCES
VGES
IC
IC(peak) Note1
PC Note2
θj-c Note2
Tj
Tstg
Ratings
600
±30
40
80
178.5
0.7
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/W
°C
°C
REJ03G1863-0100 Rev.1.00 Nov 09, 2009
Page 1 of 5
1 page RJP6085DPN
Package Dimensions
Package Name
TO-220AB
JEITA Package Code
SC-46
RENESAS Code
Previous Code MASS[Typ.]
PRSS0004AC-A TO-220AB / TO-220ABV
1.8g
11.5 Max
10.16 ± 0.2
9.5
8.0
φ
3.6
+0.1
–0.08
4.44 ± 0.2
1.26 ± 0.15
www.DataSheet4U.com
Unit: mm
2.54 ± 0.5
1.5 Max
0.76 ± 0.1
2.54 ± 0.5
2.7 Max
0.5 ± 0.1
Ordering Information
Part No.
RJP6085DPN-00-T2
Quantity
600 pcs
Box (Tube)
Shipping Container
REJ03G1863-0100 Rev.1.00 Nov 09, 2009
Page 5 of 5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet RJP6085DPN.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJP6085DPK | Silicon N Channel IGBT High Speed Power Switching | Renesas Technology |
RJP6085DPN | Silicon N Channel IGBT High Speed Power Switching | Renesas Technology |
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