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PDF PBSS4032SPN Data sheet ( Hoja de datos )
| Número de pieza | PBSS4032SPN | |
| Descripción | 30V NPN/PNP low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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DataSheet.in
PBSS4032SPN
30 V NPN/PNP low VCEsat (BISS) transistor
Rev. 1 — 14 July 2010
Product data sheet
1. Product profile
1.1 General description
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PBSS4032SPN SOT96-1
Name
SO8
NPN/NPN
complement
PBSS4032SN
PNP/PNP
complement
PBSS4032SP
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
TR1; NPN low VCEsat transistor
VCEO collector-emitter voltage
IC collector current
ICM peak collector current
RCEsat collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
IC = 4 A; IB = 0.4 A
Min Typ Max Unit
- - 30 V
- - 5.7 A
- - 10 A
[1] - 45 62.5 mΩ
1 page  
DataSheet.in
NXP Semiconductors
PBSS4032SPN
30 V NPN/PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.33
0.1
0.5
0.2
0.05
0.02
0.01
0
006aac303
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Fig 2.
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aac304
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Fig 3.
FR4 PCB, mounting pad for collector 1 cm2
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4032SPN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 14 July 2010
© NXP B.V. 2010. All rights reserved.
5 of 20
5 Page 
DataSheet.in
NXP Semiconductors
PBSS4032SPN
30 V NPN/PNP low VCEsat (BISS) transistor
800
hFE
600
400
200
006aac314
(1)
(2)
(3)
−12.0
IC
(A)
−8.0
−4.0
006aac315
IB (mA) = −600
−480
−360
−240
−120
−540
−420
−300
−180
−60
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 13. TR2 (PNP): DC current gain as a function of
collector current; typical values
−1.4
VBE
(V)
−1.0
006aac316
(1)
−0.6
(2)
(3)
0.0
0.0
−1.0 −2.0 −3.0 −4.0 −5.0
VCE (V)
Tamb = 25 °C
Fig 14. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
−1.4
VBEsat
(V)
−1.0
−0.6
006aac317
(1)
(2)
(3)
−0.2
−10−1
−1
−10
−102
−103
−104
IC (mA)
−0.2
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 15. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 16. TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
PBSS4032SPN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 14 July 2010
© NXP B.V. 2010. All rights reserved.
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