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부품번호 PBSS4041SN 기능
기능 6.7A NPN/NPN Low V_CEsat (BISS) Transistor
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PBSS4041SN 데이터시트, 핀배열, 회로
DataSheet.in
PBSS4041SN
60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor
Rev. 1 — 14 July 2010
Product data sheet
1. Product profile
1.1 General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PBSS4041SN SOT96-1
Name
SO8
PNP/PNP
complement
PBSS4041SP
NPN/PNP
complement
PBSS4041SPN
1.2 Features and benefits
„ Very low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ Loadswitch
„ Battery-driven devices
„ Power management
„ Charging circuits
„ Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Min Typ Max
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
open base
single pulse;
tp 1 ms
IC = 4 A; IB = 0.2 A
-
-
-
[1] -
- 60
- 6.7
- 15
32 48
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Unit
V
A
A
mΩ




PBSS4041SN pdf, 반도체, 판매, 대치품
DataSheet.in
NXP Semiconductors
PBSS4041SN
60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1] - - 170 K/W
[2] - - 125 K/W
[3] - - 75 K/W
- - 40 K/W
in free air
[1] - - 145 K/W
[2] - - 90 K/W
[3] - - 55 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aac323
101
105
104
103
102
101
1
10 102 103
tp (s)
Fig 2.
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4041SN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 14 July 2010
© NXP B.V. 2010. All rights reserved.
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PBSS4041SN 전자부품, 판매, 대치품
DataSheet.in
NXP Semiconductors
PBSS4041SN
60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor
1000
hFE
800
600
400
200
006aac326
(1)
(2)
(3)
16.0
IC
(A)
12.0
8.0
4.0
006aac327
IB (mA) = 300
240
180
120
270
210
150
90
60
30
0
101
1
10 102 103 104 105
IC (mA)
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 5. DC current gain as a function of collector
current; typical values
1.4
VBE
(V)
1.0
006aac328
(1)
0.6 (2)
(3)
0.0
0.0 1.0 2.0 3.0 4.0 5.0
VCE (V)
Tamb = 25 °C
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
1.6
VBEsat
(V)
1.2
006aac329
(1)
0.8
(2)
0.4 (3)
0.2
101
1
10 102 103 104 105
IC (mA)
0.0
101
1
10 102 103 104 105
IC (mA)
VCE = 2 V
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 20
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS4041SN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 14 July 2010
© NXP B.V. 2010. All rights reserved.
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