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부품번호 | PBSS4041SN 기능 |
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기능 | 6.7A NPN/NPN Low V_CEsat (BISS) Transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
DataSheet.in
PBSS4041SN
60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor
Rev. 1 — 14 July 2010
Product data sheet
1. Product profile
1.1 General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PBSS4041SN SOT96-1
Name
SO8
PNP/PNP
complement
PBSS4041SP
NPN/PNP
complement
PBSS4041SPN
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Min Typ Max
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
open base
single pulse;
tp ≤ 1 ms
IC = 4 A; IB = 0.2 A
-
-
-
[1] -
- 60
- 6.7
- 15
32 48
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Unit
V
A
A
mΩ
DataSheet.in
NXP Semiconductors
PBSS4041SN
60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1] - - 170 K/W
[2] - - 125 K/W
[3] - - 75 K/W
- - 40 K/W
in free air
[1] - - 145 K/W
[2] - - 90 K/W
[3] - - 55 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aac323
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Fig 2.
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4041SN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 14 July 2010
© NXP B.V. 2010. All rights reserved.
4 of 15
4페이지 DataSheet.in
NXP Semiconductors
PBSS4041SN
60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor
1000
hFE
800
600
400
200
006aac326
(1)
(2)
(3)
16.0
IC
(A)
12.0
8.0
4.0
006aac327
IB (mA) = 300
240
180
120
270
210
150
90
60
30
0
10−1
1
10 102 103 104 105
IC (mA)
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
1.4
VBE
(V)
1.0
006aac328
(1)
0.6 (2)
(3)
0.0
0.0 1.0 2.0 3.0 4.0 5.0
VCE (V)
Tamb = 25 °C
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
1.6
VBEsat
(V)
1.2
006aac329
(1)
0.8
(2)
0.4 (3)
0.2
10−1
1
10 102 103 104 105
IC (mA)
0.0
10−1
1
10 102 103 104 105
IC (mA)
VCE = 2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS4041SN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 14 July 2010
© NXP B.V. 2010. All rights reserved.
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부품번호 | 상세설명 및 기능 | 제조사 |
PBSS4041SN | 6.7A NPN/NPN Low V_CEsat (BISS) Transistor | NXP Semiconductors |
PBSS4041SP | 5.9A PNP/PNP Low V_CEsat (BISS) Transistor | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |