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부품번호 | PBSS4032PT 기능 |
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기능 | 2.4A PNP low VCEsat (BISS) transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
DataSheet.in
PBSS4032PT
30 V, 2.4 A PNP low VCEsat (BISS) transistor
Rev. 01 — 18 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4032NT.
1.2 Features
Low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp ≤ 1 ms
IC = −2 A;
IB = −200 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - −30 V
- - −2.4 A
- - −5 A
[1] - 110 165 mΩ
DataSheet.in
NXP Semiconductors
PBSS4032PT
30 V, 2.4 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] - - 320 K/W
[2] - - 190 K/W
[3] - - 115 K/W
- - 62 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab955
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4032PT_1
Product data sheet
Rev. 01 — 18 December 2009
© NXP B.V. 2009. All rights reserved.
4 of 14
4페이지 DataSheet.in
NXP Semiconductors
600
hFE
400
200
006aab966
(1)
(2)
(3)
PBSS4032PT
30 V, 2.4 A PNP low VCEsat (BISS) transistor
−3.0
IC
(A)
−2.0
−1.0
IB (mA) = −50
−40
−30
−20
−10
006aab967
−45
−35
−25
−15
−5
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
−1.8
VBE
(V)
−1.2
006aab968
−0.6
(1)
(2)
(3)
0.0
0.0
−1.0 −2.0 −3.0 −4.0 −5.0
VCE (V)
Tamb = 25 °C
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
−1.4
VBEsat
(V)
−1.0
−0.6
006aab969
(1)
(2)
(3)
0.0
−10−1
−1
−10
−102
−103
−104
IC (mA)
−0.2
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS4032PT_1
Product data sheet
Rev. 01 — 18 December 2009
© NXP B.V. 2009. All rights reserved.
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