PDF BUK663R5-55C Data sheet ( Hoja de datos )

Número de pieza	BUK663R5-55C
Descripción	N-channel TrenchMOS FET
Fabricantes	NXP Semiconductors
Logotipo
Hay una vista previa y un enlace de descarga de BUK663R5-55C (archivo pdf) en la parte inferior de esta página. Total 11 Páginas
No Preview Available ! DataSheet.in BUK663R5-55C N-channel TrenchMOS FET Rev. 01 — 3 August 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V and 24 V Automotive systems ABS/ESP Engine management HVAC Motors, lamps and solenoid control Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Static characteristics RDSon drain-source on-state resistance Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 5 ID = 100 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped [1] Continuous current is limited by package. Min Typ Max Unit - - 55 V [1] - - 100 A - - 263 W - 2.7 3.5 mΩ - - 551 mJ 1 page DataSheet.in NXP Semiconductors BUK663R5-55C N-channel TrenchMOS FET 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Dynamic characteristics QG(tot) total gate charge QGS QGD Ciss Coss Crss td(on) tr td(off) tf LD gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance LS internal source inductance Source-drain diode VSD source-drain voltage trr reverse recovery time Qr recovered charge Conditions ID = 250 µA; VGS = 0 V; Tj = 25 °C ID = 250 µA; VGS = 0 V; Tj = -55 °C ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 4 ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 4 ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 4 VDS = 55 V; VGS = 0 V; Tj = 175 °C VDS = 55 V; VGS = 0 V; Tj = 25 °C VDS = 0 V; VGS = 20 V; Tj = 25 °C VDS = 0 V; VGS = -20 V; Tj = 25 °C VGS = 5 V; ID = 15 A; Tj = 25 °C; see Figure 5 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 5 VGS = 4.5 V; ID = 15 A; Tj = 25 °C; see Figure 5 VGS = 10 V; ID = 15 A; Tj = 175 °C; see Figure 5 ID = 25 A; VDS = 40 V; VGS = 10 V ID = 25 A; VDS = 40 V; VGS = 5 V ID = 25 A; VDS = 40 V; VGS = 10 V VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω from drain lead 6 mm from package to centre of die ; Tj = 25 °C from source lead to source bond pad ; Tj = 25 °C IS = 25 A; VGS = 0 V; Tj = 25 °C IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V BUK663R5-55C Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 3 August 2010 Min Typ Max Unit 55 - - V 50 - - V 1.5 2.1 2.5 V - - 2.8 V 0.8 - - V - - 500 µA - 0.02 1 µA - 2 100 nA - 2 100 nA - [tbd] [tbd] mΩ - 2.7 3.5 mΩ - [tbd] [tbd] mΩ - - 7.4 mΩ - [tbd] [tbd] nC - [tbd] [tbd] nC - [tbd] [tbd] nC - [tbd] [tbd] nC - [tbd] [tbd] pF - [tbd] [tbd] pF - [tbd] [tbd] pF - [tbd] [tbd] ns - [tbd] [tbd] ns - [tbd] [tbd] ns - [tbd] [tbd] ns - 4.5 - nH - 7.5 - nH - 0.85 1.2 V - [tbd] [tbd] ns - [tbd] [tbd] nC © NXP B.V. 2010. All rights reserved. 5 of 11 5 Page DataSheet.in NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9 9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10 10 Contact information. . . . . . . . . . . . . . . . . . . . . .10 BUK663R5-55C N-channel TrenchMOS FET Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 August 2010 Document identifier: BUK663R5-55C 11 Page

Páginas	Total 11 Páginas
PDF Descargar	[ Datasheet BUK663R5-55C.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
BUK663R5-55C	N-channel TrenchMOS FET	NXP Semiconductors

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar