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부품번호 | BUK661R9-40C 기능 |
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기능 | N-channel TrenchMOS intermediate level FET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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DataSheet.in
BUK661R9-40C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 18 August 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11
Min Typ Max Unit
- - 40 V
[1] - - 120 A
- - 306 W
- 1.6 1.9 mΩ
DataSheet.in
NXP Semiconductors
300
ID
(A)
200
100
003aac385
(1)
0
0 50 100 150 200
Tmb (°C)
BUK661R9-40C
N-channel TrenchMOS intermediate level FET
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
104
ID
(A)
103
Limit RDSon = VDS/ ID
102
10
1
10-1
10-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae247
tp =10 μ s
100 μ s
1 ms
DC
10 ms
100 ms
10 102
V DS(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK661R9-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 August 2010
© NXP B.V. 2010. All rights reserved.
4 of 15
4페이지 DataSheet.in
NXP Semiconductors
BUK661R9-40C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V
250
gfs
(S)
200
003aae251
150
100
50
0
0 20 40 60 80 100
ID (A)
8
RDSon
(mΩ)
6
4
2
0
05
Min Typ Max Unit
- 0.8 1.2 V
- 63 - ns
- 127 - nC
003aae250
10 15 20
VGS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
100
ID
(A)
80
10 5 4 3.8
003aae248
3.6
60
3.4
40 3.3
20
0
0
VGS(V) = 3.2
0.2 0.4 0.6 0.8
1
VDS(V)
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
80
ID
(A)
60
003aae249
40
20
0
0
Tj = 175 °C
Tj = 25 °C
1234
VGS(V)
Fig 7. Output characteristics: drain current as a
Fig 8. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
BUK661R9-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 August 2010
© NXP B.V. 2010. All rights reserved.
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BUK661R9-40C | N-channel TrenchMOS intermediate level FET | NXP Semiconductors |
BUK661R9-40C | N-channel TrenchMOS intermediate level FET | NXP Semiconductors |
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