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BUK661R9-40C 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BUK661R9-40C은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 BUK661R9-40C 기능
기능 N-channel TrenchMOS intermediate level FET
제조업체 NXP Semiconductors
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BUK661R9-40C 데이터시트, 핀배열, 회로
DataSheet.in
BUK661R9-40C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 18 August 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for intermediate level gate
drive sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V Automotive systems
„ Electric and electro-hydraulic power
steering
„ Motors, lamps and solenoid control
„ Start-Stop micro-hybrid applications
„ Transmission control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11
Min Typ Max Unit
- - 40 V
[1] - - 120 A
- - 306 W
- 1.6 1.9 m




BUK661R9-40C pdf, 반도체, 판매, 대치품
DataSheet.in
NXP Semiconductors
300
ID
(A)
200
100
003aac385
(1)
0
0 50 100 150 200
Tmb (°C)
BUK661R9-40C
N-channel TrenchMOS intermediate level FET
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
104
ID
(A)
103
Limit RDSon = VDS/ ID
102
10
1
10-1
10-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae247
tp =10 μ s
100 μ s
1 ms
DC
10 ms
100 ms
10 102
V DS(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK661R9-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 August 2010
© NXP B.V. 2010. All rights reserved.
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BUK661R9-40C 전자부품, 판매, 대치품
DataSheet.in
NXP Semiconductors
BUK661R9-40C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V
250
gfs
(S)
200
003aae251
150
100
50
0
0 20 40 60 80 100
ID (A)
8
RDSon
(mΩ)
6
4
2
0
05
Min Typ Max Unit
- 0.8 1.2 V
- 63 - ns
- 127 - nC
003aae250
10 15 20
VGS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
100
ID
(A)
80
10 5 4 3.8
003aae248
3.6
60
3.4
40 3.3
20
0
0
VGS(V) = 3.2
0.2 0.4 0.6 0.8
1
VDS(V)
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
80
ID
(A)
60
003aae249
40
20
0
0
Tj = 175 °C
Tj = 25 °C
1234
VGS(V)
Fig 7. Output characteristics: drain current as a
Fig 8. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
BUK661R9-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 August 2010
© NXP B.V. 2010. All rights reserved.
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부품번호상세설명 및 기능제조사
BUK661R9-40C

N-channel TrenchMOS intermediate level FET

NXP Semiconductors
NXP Semiconductors
BUK661R9-40C

N-channel TrenchMOS intermediate level FET

NXP Semiconductors
NXP Semiconductors

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