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PDF AUIRF7669L2TR1 Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7669L2TR1 | |
| Descripción | Automotive DirectFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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DataSheet.in
AUTOMOTIVE GRADE
PD - 97536
AUIRF7669L2TR
AUIRF7669L2TR1
• Advanced Process Technology
• Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS and Halogen free
Automotive DirectFET Power MOSFET
V(BR)DSS
100V
RDS(on) typ.
3.5mΩ
max.
4.4mΩ
ID (Silicon Limited)
114A
Qg 81nC
Applicable DirectFET Outline and Substrate Outline
L8 DirectFET ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7669L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET
packaging platform coupled with the latest silicon technology allows the AUIRF7669L2TR(1) to offer substantial system level savings and
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
fPulsed Drain Current
fPower Dissipation
ePower Dissipation
hSingle Pulse Avalanche Energy (Thermally Limited)
gSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
Repetitive Avalanche Energy
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
Parameter
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Junction-to-PCB Mounted
fLinear Derating Factor
Max.
100
± 20
114
81
19
375
460
100
3.3
260
850
See Fig.12a, 12b, 15, 16
260
-55 to + 175
Typ.
–––
12.5
20
–––
–––
Max.
45
–––
–––
1.2
0.5
0.83
Units
V
A
W
mJ
A
mJ
°C
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
07/13/2010
1 page  
DataSheet.in
AUIRF7669L2TR/TR1
6.0 1000
VGS = 0V
5.0 TJ = -40°C
4.0
100
TJ = 25°C
TJ = 175°C
3.0
ID = 250µA
2.0
ID = 1.0mA
ID = 1.0A
10
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 7. Typical Threshold Voltage vs.
Junction Temperature
250
TJ = 25°C
200
150
TJ = 175°C
100
50 VDS = 10V
20µs PULSE WIDTH
0
0 25 50 75 100 125 150 175 200
ID,Drain-to-Source Current (A)
Fig 9. Typical Forward Transconductance vs. Drain Current
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
1000
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
14.0
ID= 68A
12.0
VDS= 80V
10.0
VDS= 50V
VDS= 20V
8.0
6.0
4.0
2.0
0.0
0
20 40 60 80 100
QG, Total Gate Charge (nC)
120
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com
120
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 12. Maximum Drain Current vs. Case Temperature
5
5 Page 
DataSheet.in
AUIRF7669L2TR/TR1
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to
make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and condi-
tions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where
mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications
using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and
operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied
by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive
business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional
restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all
express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not
responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in
other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation
where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application,
Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against
all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manu-
facture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifi-
cally designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military specifica-
tions. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer’s
risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are desig-
nated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge
and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such
requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
11
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