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PDF AUIRF7675M2TR Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7675M2TR | |
| Descripción | Automotive Grade Single N-Channel HEXFET | |
| Fabricantes | International Rectifier | |
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DataSheet.in
AUTOMOTIVE GRADE
PD -97552
AUIRF7675M2TR
AUIRF7675M2TR1
• Advanced Process Technology
• Optimized for Class D Audio Amplifier Applications
• Low Rds(on) for Improved Efficiency
• Low Qg for Better THD and Improved Efficiency
• Low Qrr for Better THD and Lower EMI
• Low Parasitic Inductance for Reduced Ringing and Lower EMI
• Delivers up to 250W per Channel into 4Ω with No Heatsink
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and Reliability
• Lead free, RoHS and Halogen free
DirectFET Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
150V
47m:
56m:
RG (typical)
1.2:
Qg (typical)
21nC
S
D
G
S
D
Applicable DirectFET Outline and Substrate Outline
M2 DirectFET ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compat-
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the
voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
TP
TJ
TSTG
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
fPulsed Drain Current
fPower Dissipation
ePower Dissipation
dSingle Pulse Avalanche Energy (Thermally Limited)
gSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
150
± 20
18
13
4.4
90
72
45
2.7
59
170
See Fig.18a, 18b, 15, 16
270
-55 to + 175
V
A
W
mJ
A
mJ
°C
Thermal Resistance
RθJA
RθJA
RθJA
RθJ-Can
RθJ-PCB
Parameter
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Junction-to-PCB Mounted
flLinear Derating Factor
Typ.
–––
12.5
20
–––
1.4
Max.
60
–––
–––
3.3
–––
0.3
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
8/16/10
1 page  
DataSheet.in
AUIRF7675M2TR/TR1
5.5 100
TJ = -40°C
TJ = 25°C
TJ = 175°C
4.5
10
3.5 ID = 100μA
ID = 250μA
ID = 1.0mA
2.5 ID = 1.0A
1
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 7. Typical Threshold Voltage vs. Junction Temperature
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
50 100000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
40
TJ = 25°C
10000
Crss = C gd
Coss = Cds + Cgd
30 TJ = 175°C
20
10
0
0
VDS = 10V
380μs PULSE WIDTH
4 8 12 16 20
ID,Drain-to-Source Current (A)
24
Fig 9. Typical Forward Transconductance Vs. Drain Current
14
ID= 11A
12
10
VDS= 120V
VDS= 75V
VDS= 30V
8
1000
100
Ciss
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
20
16
12
68
4
4
2
0
0 4 8 12 16 20 24 28
QG, Total Gate Charge (nC)
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com
Fig 12. Maximum Drain Current vs. Case Temperature
5
5 Page 
DataSheet.in
AUIRF7675M2TR/TR1
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the
“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance
and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of
order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to
support this warranty. Except where mandated by government requirements, testing of all parameters of each product is
not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications, custom-
ers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and
is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with
alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation.
Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product
or service voids all express and any implied warranties for the associated IR product or service and is an unfair and
deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of
the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR
products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and ex-
penses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated
with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or
manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR
products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as
military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR
has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with
all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applica-
tions, IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
11
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