Datasheet.kr   

AUIRF7675M2TR1 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 AUIRF7675M2TR1은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 AUIRF7675M2TR1 자료 제공

부품번호 AUIRF7675M2TR1 기능
기능 Automotive Grade Single N-Channel HEXFET
제조업체 International Rectifier
로고 International Rectifier 로고


AUIRF7675M2TR1 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 11 페이지수

미리보기를 사용할 수 없습니다

AUIRF7675M2TR1 데이터시트, 핀배열, 회로
DataSheet.in
AUTOMOTIVE GRADE
PD -97552
AUIRF7675M2TR
AUIRF7675M2TR1
Advanced Process Technology
Optimized for Class D Audio Amplifier Applications
Low Rds(on) for Improved Efficiency
Low Qg for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Low Parasitic Inductance for Reduced Ringing and Lower EMI
Delivers up to 250W per Channel into 4Ω with No Heatsink
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
DirectFET™ Power MOSFET ‚
V(BR)DSS
RDS(on) typ.
max.
150V
47m:
56m:
RG (typical)
1.2:
Qg (typical)
21nC
S
D
G
S
D
Applicable DirectFET Outline and Substrate Outline 
M2 DirectFET™ ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compat-
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the
voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
TP
TJ
TSTG
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
fPulsed Drain Current
fPower Dissipation
ePower Dissipation
dSingle Pulse Avalanche Energy (Thermally Limited)
gSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
™Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
150
± 20
18
13
4.4
90
72
45
2.7
59
170
See Fig.18a, 18b, 15, 16
270
-55 to + 175
V
A
W
mJ
A
mJ
°C
Thermal Resistance
RθJA
RθJA
RθJA
RθJ-Can
RθJ-PCB
Parameter
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Junction-to-PCB Mounted
flLinear Derating Factor
Typ.
–––
12.5
20
–––
1.4
Max.
60
–––
–––
3.3
–––
0.3
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
8/16/10




AUIRF7675M2TR1 pdf, 반도체, 판매, 대치품
DataSheet.in
AUIRF7675M2TR/TR1
100
VGS
TOP
15V
10V
8.0V
7.0V
10
6.5V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
0.1
5.0V
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
140
ID = 11A
120
100
TJ = 125°C
80
60
TJ = 25°C
40
6
8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 3. Typical On-Resistance vs. Gate Voltage
100
10
1
0.1
0.01
3
TJ = -40°C
TJ = 25°C
TJ = 175°C
VDS = 50V
60μs PULSE WIDTH
45678
VGS, Gate-to-Source Voltage (V)
9
Fig 5. Typical Transfer Characteristics
4
100
VGS
TOP
15V
10V
8.0V
7.0V
10
6.5V
6.0V
5.5V
BOTTOM 5.0V
1
5.0V
0.1
0.1
60μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
200
Vgs = 10V
160 TJ = 125°C
120
80 TJ = 25°C
40
0
10 20 30 40 50 60
ID, Drain Current (A)
Fig 4. Typical On-Resistance vs. Drain Current
3.0
ID = 11A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
www.irf.com

4페이지










AUIRF7675M2TR1 전자부품, 판매, 대치품
DataSheet.in
60
TOP
Single Pulse
BOTTOM 1% Duty Cycle
50 ID = 11A
40
30
20
10
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy Vs. Temperature
15V
VDS
L
DRIVER
RG
2V0VGS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 18a. Unclamped Inductive Test Circuit
L
VCC
DUT
0
210K S
Fig 19a. Gate Charge Test Circuit
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+
- VDD
Fig 20a. Switching Time Test Circuit
www.irf.com
AUIRF7675M2TR/TR1
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
V(BR)DSS
tp
I AS
Fig 18b. Unclamped Inductive Waveforms
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 19b. Gate Charge Waveform
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 20b. Switching Time Waveforms
7

7페이지


구       성 총 11 페이지수
다운로드[ AUIRF7675M2TR1.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
AUIRF7675M2TR

Automotive Grade Single N-Channel HEXFET

International Rectifier
International Rectifier
AUIRF7675M2TR

Power MOSFET ( Transistor )

Infineon
Infineon

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵