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부품번호 | BGA2866 기능 |
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기능 | MMIC Wideband Amplifier | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 18 페이지수
BGA2866
MMIC wideband amplifier
Rev. 1 — 17 August 2010
Product data sheet
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Input internally matched to 50 Ω
A gain of 23.2 dB at 250 MHz increasing to 24.3 dB at 2150 MHz
Output power at 1 dB gain compression = 4 dBm
Supply current = 17.4 mA at a supply voltage of 5 V
Reverse isolation > 32 dB up to 2150 MHz
Good linearity with low second order and third order products
Noise figure = 3.8 dB at 950 MHz
Unconditionally stable (K > 1)
No output inductor required
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
Table 1.
Pin
1
2, 5
3
4
6
Pinning
Description
VCC
GND2
RF_OUT
GND1
RF_IN
Simplified outline Graphic symbol
654
1
63
123
4 2, 5
sym052
NXP Semiconductors
BGA2866
MMIC wideband amplifier
8. Application information
Figure 1 shows a typical application circuit for the BGA2866 MMIC. The device is
internally matched to 50 Ω and therefore does not need any external matching. The value
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The 22 nF supply decoupling capacitor C1 should be located as close as possible to the
MMIC.
The PCB top ground plane, connected to pins 2, 4 and 5 must be as close as possible to
the MMIC, preferably also below the MMIC. When using via holes, use multiple via holes
as close as possible to the MMIC.
VS
C1
C2 RF_IN
RF input
VS
RF_OUT C3
RF output
GND1
GND2
Fig 1. Typical application circuit
8.1 Application examples
001aaf761
from RF
circuit
mixer
wideband
amplifier
to IF circuit
or demodulator
antenna
wideband
LNA amplifier mixer
to IF circuit
or demodulator
oscillator
001aaf762
Fig 2.
The MMIC is very suitable as IF amplifier in e.g. LNB’s.
The excellent wideband characteristics make it an easy
building block.
Application as IF amplifier
oscillator
001aaf763
As second amplifier after an LNA, the MMIC offers an
easy matching, low noise solution.
Fig 3. Application as RF amplifier
BGA2866
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 August 2010
© NXP B.V. 2010. All rights reserved.
4 of 18
4페이지 NXP Semiconductors
BGA2866
MMIC wideband amplifier
103
K
102
10
1
001aam320
(1)
(2)
(3)
(4)
(5)
10−1
0123
f (GHz)
Pdrive = −40 dBm; Z0 = 50 Ω.
(1) VCC = 4.5 V; Tamb = 85 °C; ICC = 14.36 mA
(2) VCC = 4.5 V; Tamb = −40 °C; ICC = 16.41 mA
(3) VCC = 5.0 V; Tamb = 25 °C; ICC = 16.63 mA
(4) VCC = 5.5 V; Tamb = 85 °C; ICC = 17.27 mA
(5) VCC = 5.5 V; Tamb = −40 °C; ICC = 19.29 mA
Fig 6. Rollett stability factor as function of
frequency; typical values
0
RLin
(dB)
−10
−20
001aam321
(1)
(2)
(3)
(4)
(5)
−30
0123
f (GHz)
Pdrive = −40 dBm; Z0 = 50 Ω.
(1) VCC = 4.5 V; Tamb = 85 °C; ICC = 14.36 mA
(2) VCC = 4.5 V; Tamb = −40 °C; ICC = 16.41 mA
(3) VCC = 5.0 V; Tamb = 25 °C; ICC = 16.63 mA
(4) VCC = 5.5 V; Tamb = 85 °C; ICC = 17.27 mA
(5) VCC = 5.5 V; Tamb = −40 °C; ICC = 19.29 mA
Fig 7. Input return loss as function of frequency;
typical values
BGA2866
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 August 2010
© NXP B.V. 2010. All rights reserved.
7 of 18
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